| 12183798 |
Threshold voltage modulation for gate-all-around FET architecture |
Steven C. H. Hung, Benjamin Colombeau, Myungsun Kim, Srinivas Gandikota, Yixiong Yang +1 more |
2024-12-31 |
| 12114488 |
Enhancing gapfill performance of dram word line |
Kunal Bhatnagar, Srinivas Gandikota, Seshadri Ganguli, Jose Alexandro Romero, Mandyam Sriram +3 more |
2024-10-08 |
| 12100595 |
Amorphous silicon-based scavenging and sealing EOT |
Jacqueline S. Wrench, Yixiong Yang, Jianqiu GUO, Seshadri Ganguli, Steven C. H. Hung +1 more |
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| 12051734 |
PMOS high-k metal gates |
Srinivas Gandikota, Steven C. H. Hung, Mandyam Sriram, Jacqueline S. Wrench, Yixiong Yang |
2024-07-30 |
| 12022650 |
Low resistivity DRAM buried word line stack |
Yixiong Yang, Jacqueline S. Wrench, Srinivas Gandikota, Annamalai Lakshmanan, Joung Joo Lee +2 more |
2024-06-25 |
| 11997849 |
V-NAND stacks with dipole regions |
Jacqueline S. Wrench, Yixiong Yang, Pradeep Subrahmanyan, Srinivas Gandikota |
2024-05-28 |
| 11961734 |
Treatments to enhance material structures |
Srinivas Gandikota, Yixiong Yang, Jacqueline S. Wrench, Steven C. H. Hung |
2024-04-16 |
| 11955332 |
Treatments to enhance material structures |
Srinivas Gandikota, Yixiong Yang, Jacqueline S. Wrench, Steven C. H. Hung |
2024-04-09 |
| 11869806 |
Methods of forming molybdenum contacts |
Seshadri Ganguli, Jacqueline S. Wrench, Yixiong Yang, Srinivas Gandikota |
2024-01-09 |
