Issued Patents 2023
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11800710 | Three-dimensional memory devices and fabricating methods thereof | Li Xiao | 2023-10-24 |
| 11792989 | Word line structure of three-dimensional memory device | Qiang Xu, Fandong Liu, Zhiliang Xia, Yaohua Yang, Peizhen Hong +2 more | 2023-10-17 |
| 11785772 | Three-dimensional memory device with source structure and methods for forming the same | Wenxiang Xu, Wei Xu, Pan Huang, Ping Yan, Wenbin Zhou +1 more | 2023-10-10 |
| 11765897 | Three-dimensional memory device without gate line slits and method for forming the same | Haohao Yang, Wei Xu, Ping Yan, Pan Huang, Wenbin Zhou | 2023-09-19 |
| 11765898 | Stacked connections in 3D memory and methods of making the same | Jun Liu | 2023-09-19 |
| 11758729 | Three-dimensional memory device having a shielding layer and method for forming the same | Zhiliang Xia, Li Xiao, Jun Chen | 2023-09-12 |
| 11758731 | Three-dimensional memory device having a shielding layer and method for forming the same | Zhiliang Xia, Li Xiao, Jun Chen | 2023-09-12 |
| 11758723 | Three-dimensional memory device with source contacts connected by an adhesion layer and methods for forming the same | Qingqing Wang, Wei Xu, Pan Huang, Ping Yan, Wenbin Zhou | 2023-09-12 |
| 11751394 | Three-dimensional memory device and method for forming the same | Linchun Wu, Shan Li, Zhiliang Xia, Kun Zhang, Wenxi Zhou | 2023-09-05 |
| 11729971 | Trench structures for three-dimensional memory devices | Qiang Xu, Zhiliang Xia, Ping Yan, Guangji Li | 2023-08-15 |
| 11716850 | Three-dimensional memory device with support structures in gate line slits and methods for forming the same | Haohao Yang, Wei Xu, Ping Yan, Pan Huang, Wenbin Zhou | 2023-08-01 |
| 11653495 | Three-dimensional memory device with source structure and methods for forming the same | Wenxiang Xu, Wei Xu, Pan Huang, Ping Yan, Wenbin Zhou +1 more | 2023-05-16 |
| 11647632 | Three-dimensional memory devices with supporting structure for staircase region | Kun Zhang, Linchun Wu, Zhong Zhang, Wenxi Zhou | 2023-05-09 |
| 11626416 | Method for forming three-dimensional memory device with backside source contact | Kun Zhang, Linchun Wu, Wenxi Zhou, Zhiliang Xia | 2023-04-11 |
| 11621275 | Three-dimensional memory device with hydrogen-rich semiconductor channels | Kun Zhang, Wenxi Zhou, Zhiliang Xia | 2023-04-04 |
| 11600637 | Stacked connections in 3D memory and methods of making the same | Jun Liu | 2023-03-07 |
| 11600636 | Stacked connections in 3D memory and methods of making the same | Jun Liu | 2023-03-07 |
| 11594552 | Three-dimensional memory device with corrosion-resistant composite spacer | Bo Xu, Ping Yan, Chuan Yang, Jing Gao, Lu Zhang | 2023-02-28 |
| 11574919 | Openings layout of three-dimensional memory device | Jia He, Haihui Huang, Fandong Liu, Yaohua Yang, Peizhen Hong +4 more | 2023-02-07 |
| 11574922 | Three-dimensional memory devices | Kun Zhang, Wenxi Zhou, Zhiliang Xia | 2023-02-07 |
| 11557570 | Methods for forming three-dimensional memory devices | Kun Zhang, Wenxi Zhou, Zhiliang Xia | 2023-01-17 |