Issued Patents 2023
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11849575 | Concentric staircase structure in three-dimensional memory device and method for forming the same | Kun Zhang, Cuicui Kong, Zhong Zhang | 2023-12-19 |
| 11839083 | 3D NAND memory device and method of forming the same | Yingjie Ouyang, Zhiliang Xia, Lei Jin, Qiguang Wang, Zhongwang Sun +3 more | 2023-12-05 |
| 11839079 | Three-dimensional memory devices and methods for forming the same | Qiguang Wang | 2023-12-05 |
| 11837541 | Memory device and fabrication method thereof | Zhong Zhang, Kun Zhang, Zhiliang Xia | 2023-12-05 |
| 11812611 | Three-dimensional memory devices and methods for forming the same | Qiguang Wang | 2023-11-07 |
| 11812614 | Vertical memory devices | Zhong Zhang, Zhiliang Xia | 2023-11-07 |
| 11751394 | Three-dimensional memory device and method for forming the same | Linchun Wu, Shan Li, Zhiliang Xia, Kun Zhang, Zongliang Huo | 2023-09-05 |
| 11749737 | Memory device with bottom-select-gate structure and method for forming the same | Zhongwang Sun, Zhong Zhang, Lei Liu, Zhiliang Xia | 2023-09-05 |
| 11735543 | DRAM memory device with xtacking architecture | Lei Liu, Di Wang, Zhiliang Xia | 2023-08-22 |
| 11716853 | Method for fabricating three-dimensional memory device by thickening an epitaxial layer | Linchun Wu, Kun Zhang, Zhiliang Xia | 2023-08-01 |
| 11699659 | Staircase structure in three-dimensional memory device and method for forming the same | Di Wang, Zhiliang Xia, Zhong Zhang | 2023-07-11 |
| 11699732 | Method for forming memory device comprising bottom-select-gate structure | Zhongwang Sun, Zhong Zhang, Lei Liu, Zhiliang Xia | 2023-07-11 |
| 11696439 | Staircase structure in three-dimensional memory device and method for forming the same | Zhong Zhang, Zhongwang Sun, Zhiliang Xia | 2023-07-04 |
| 11670592 | Staircase structure in three-dimensional memory device and method for forming the same | Zhong Zhang, Zhongwang Sun | 2023-06-06 |
| 11665892 | Staircase structure in three-dimensional memory device and method for forming the same | Zhongwang Sun, Zhong Zhang, Zhiliang Xia | 2023-05-30 |
| 11647632 | Three-dimensional memory devices with supporting structure for staircase region | Kun Zhang, Linchun Wu, Zhong Zhang, Zongliang Huo | 2023-05-09 |
| 11626416 | Method for forming three-dimensional memory device with backside source contact | Kun Zhang, Linchun Wu, Zhiliang Xia, Zongliang Huo | 2023-04-11 |
| 11621275 | Three-dimensional memory device with hydrogen-rich semiconductor channels | Kun Zhang, Zhiliang Xia, Zongliang Huo | 2023-04-04 |
| 11600633 | Local contacts of three-dimensional memory devices and methods for forming the same | Jianzhong Wu, Kun Zhang, Tingting Zhao, Rui Su, Zhongwang Sun +1 more | 2023-03-07 |
| 11587945 | Three-dimensional NAND memory device with reduced RC delay | Zhong Zhang, Zhongwang Sun, Zhiliang Xia, Zhi Zhang | 2023-02-21 |
| 11574922 | Three-dimensional memory devices | Kun Zhang, Zhiliang Xia, Zongliang Huo | 2023-02-07 |
| 11562945 | Semiconductor device having a spacer structure in a conductive layer and a contact structure in the spacer structure | Linchun Wu, Kun Zhang, Zhong Zhang, Zhiliang Xia | 2023-01-24 |
| 11557570 | Methods for forming three-dimensional memory devices | Kun Zhang, Zhiliang Xia, Zongliang Huo | 2023-01-17 |