FY

Feng Yuan

TSMC: 3 patents #1,075 of 4,064Top 30%
📍 Hsinchu, CA: #83 of 214 inventorsTop 40%
Overall (2023): #80,220 of 537,848Top 15%
3
Patents 2023

Issued Patents 2023

Showing 1–3 of 3 patents

Patent #TitleCo-InventorsDate
11855210 Method for fabricating a strained structure and structure formed Tsung-Lin Lee, Chih-Hao Chang, Chih-Hsin Ko, Jeff J. Xu 2023-12-26
11677004 Strained channel field effect transistor Mark van Dal, Gerben Doornbos, Georgios Vellianitis, Tsung-Lin Lee 2023-06-13
11626328 Strain enhancement for FinFETs Tsung-Lin Lee, Chih Chieh Yeh, Hung-Li Chiang, Wei-Jen Lai 2023-04-11