Issued Patents 2023
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11778817 | Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the same | Ashish Baraskar, Peter Rabkin | 2023-10-03 |
| 11749736 | Three-dimensional memory device including discrete charge storage elements and methods for forming the same | Xue Bai Pitner, Fei Zhou, Senaka Kanakamedala, Ramy Nashed Bassely Said | 2023-09-05 |
| 11721727 | Three-dimensional memory device including a silicon-germanium source contact layer and method of making the same | Ashish Baraskar, Peter Rabkin | 2023-08-08 |
| 11659711 | Three-dimensional memory device including discrete charge storage elements and methods of forming the same | Yuki KASAI, Shigehisa Inoue, Tomohiro Asano | 2023-05-23 |
| 11631695 | Three-dimensional memory device containing composite word lines containing metal and silicide and method of making thereof | Rahul Sharangpani, Fei Zhou, Adarsh Rajashekhar | 2023-04-18 |
| 11631686 | Three-dimensional memory array including dual work function floating gates and method of making the same | Ramy Nashed Bassely Said, Yanli Zhang, Jiahui Yuan, Senaka Kanakamedala | 2023-04-18 |
| 11594553 | Three-dimensional ferroelectric memory device containing lattice-matched templates and methods of making the same | Rahul Sharangpani, Fei Zhou, Adarsh Rajashekhar | 2023-02-28 |
| 11594490 | Three-dimensional memory device including molybdenum carbide or carbonitride liners and methods of forming the same | Rahul Sharangpani, Fei Zhou | 2023-02-28 |
| 11569260 | Three-dimensional memory device including discrete memory elements and method of making the same | Adarsh Rajashekhar, Fei Zhou, Rahul Sharangpani | 2023-01-31 |
| 11545506 | Ferroelectric field effect transistors having enhanced memory window and methods of making the same | Bhagwati Prasad, Joyeeta Nag, Seung-Yeul Yang, Adarsh Rajashekhar | 2023-01-03 |