| 11778817 |
Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the same |
Ashish Baraskar, Raghuveer S. Makala |
2023-10-03 |
| 11728305 |
Capacitor structure including bonding pads as electrodes and methods of forming the same |
Shiqian Shao, Fumiaki Toyama |
2023-08-15 |
| 11721727 |
Three-dimensional memory device including a silicon-germanium source contact layer and method of making the same |
Ashish Baraskar, Raghuveer S. Makala |
2023-08-08 |
| 11676954 |
Bonded three-dimensional memory devices with backside source power supply mesh and methods of making the same |
Masaaki Higashitani, Kwang Ho Kim |
2023-06-13 |
| 11646283 |
Bonded assembly containing low dielectric constant bonding dielectric material |
Lin Hou, Masaaki Higashitani, Ramy Nashed Bassely Said |
2023-05-09 |
| 11646081 |
Reliability compensation for uneven NAND block degradation |
Xiang Yang, Henry Chin, Ken Oowada, Dengtao Zhao, Gerrit Jan Hemink |
2023-05-09 |
| 11646282 |
Bonded semiconductor die assembly with metal alloy bonding pads and methods of forming the same |
Lin Hou, Masaaki Higashitani |
2023-05-09 |
| 11569215 |
Three-dimensional memory device with vertical field effect transistors and method of making thereof |
Kwang Ho Kim |
2023-01-31 |
| 11562975 |
Bonded assembly employing metal-semiconductor bonding and metal-metal bonding and methods of forming the same |
Lin Hou, Masaaki Higashitani |
2023-01-24 |