Issued Patents 2023
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11804537 | Channeled implants for SiC MOSFET fabrication | Samphy Hong, Wei Zou, Hans-Joachim L. Gossmann | 2023-10-31 |
| 11798982 | Self-aligned trench MOSFET | Samphy Hong, Jason Appell, David J. Lee | 2023-10-24 |
| 11728383 | Localized stressor formation by ion implantation | Sipeng Gu, Wei Zou, Kyu-Ha Shim | 2023-08-15 |
| 11721743 | Implantation enabled precisely controlled source and drain etch depth | Wei Zou, Samphy Hong | 2023-08-08 |
| 11699570 | System and method for hi-precision ion implantation | Supakit Charnvanichborikarn, Wei Zou, Hans-Joachim L. Gossmann, Aseem K. Srivastava, William R. Bogiages, Jr. +1 more | 2023-07-11 |
| 11695060 | Ion implantation to form trench-bottom oxide of MOSFET | Samphy Hong, Wei Zou, Lei Zhong, David J. Lee, Felix Levitov | 2023-07-04 |
| 11694897 | Backside wafer dopant activation | Wei Zou | 2023-07-04 |
| 11610972 | Technique for reducing gate induced drain leakage in DRAM cells | Sipeng Gu | 2023-03-21 |