Issued Patents 2023
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11812670 | Memory device comprising a top via electrode and methods of making such a memory device | Yanping Shen, Haiting Wang | 2023-11-07 |
| 11785860 | Top electrode for a memory device and methods of making such a memory device | Haiting Wang, Yanping Shen | 2023-10-10 |
| 11728383 | Localized stressor formation by ion implantation | Wei Zou, Kyu-Ha Shim, Qintao Zhang | 2023-08-15 |
| 11728214 | Techniques for selective tungsten contact formation on semiconductor device elements | Wei Zou | 2023-08-15 |
| 11721728 | Self-aligned contact | Jiehui Shu, Halting Wang, Yanping Shen | 2023-08-08 |
| 11664419 | Isolation method to enable continuous channel layer | Wei Zou, Kyu-Ha Shim | 2023-05-30 |
| 11610972 | Technique for reducing gate induced drain leakage in DRAM cells | Qintao Zhang | 2023-03-21 |
| 11594441 | Handling for high resistivity substrates | Kyu-Ha Shim | 2023-02-28 |
| 11569437 | Memory device comprising a top via electrode and methods of making such a memory device | Yanping Shen, Halting Wang | 2023-01-31 |
| 11563085 | Transistors with separately-formed source and drain | Jiehui Shu, Baofu Zhu, Haiting Wang | 2023-01-24 |
| 11545574 | Single diffusion breaks including stacked dielectric layers | Haiting Wang, Rinus Tek Po Lee, Yue Hu | 2023-01-03 |