Issued Patents 2022
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11495738 | Dual magnetic tunnel junction devices for magnetic random access memory (MRAM) | Yu-Jen Wang, Luc Thomas, Guenole Jan | 2022-11-08 |
| 11444241 | Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive R-deposition | Yi Yang, Dongna Shen, Yu-Jen Wang | 2022-09-13 |
| 11430945 | MTJ device performance by adding stress modulation layer to MTJ device structure | Jesmin Haq, Tom Zhong, Vinh Lam, Zhongjian Teng | 2022-08-30 |
| 11424405 | Post treatment to reduce shunting devices for physical etching process | Yu-Jen Wang, Dongna Shen, Sahil Patel | 2022-08-23 |
| 11417835 | Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM) | Jodi Mari Iwata, Guenole Jan, Ru-Ying Tong, Jian Zhu, Huanlong Liu | 2022-08-16 |
| 11411174 | Silicon oxynitride based encapsulation layer for magnetic tunnel junctions | Yu-Jen Wang, Dongna Shen, Sahil Patel, Ru-Ying Tong | 2022-08-09 |
| 11316103 | Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage | Dongna Shen, Yu-Jen Wang, Ru-Ying Tong, Sahil Patel | 2022-04-26 |
| 11289645 | Method to integrate MRAM devices to the interconnects of 30nm and beyond CMOS technologies | Yi Yang, Dongna Shen, Sahil Patel, Ru-Ying Tong, Yu-Jen Wang | 2022-03-29 |