Issued Patents 2022
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11417835 | Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM) | Jodi Mari Iwata, Guenole Jan, Vignesh Sundar, Jian Zhu, Huanlong Liu | 2022-08-16 |
| 11411174 | Silicon oxynitride based encapsulation layer for magnetic tunnel junctions | Vignesh Sundar, Yu-Jen Wang, Dongna Shen, Sahil Patel | 2022-08-09 |
| 11316098 | High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications | Guenole Jan, Jodi Mari Iwata, Huanlong Lui, Yuan-Jen Lee, Jian Zhu | 2022-04-26 |
| 11316103 | Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage | Dongna Shen, Yu-Jen Wang, Vignesh Sundar, Sahil Patel | 2022-04-26 |
| 11289645 | Method to integrate MRAM devices to the interconnects of 30nm and beyond CMOS technologies | Yi Yang, Vignesh Sundar, Dongna Shen, Sahil Patel, Yu-Jen Wang | 2022-03-29 |
| 11264566 | Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio | Santiago Serrano Guisan, Luc Thomas, Jodi Mari Iwata, Guenole Jan | 2022-03-01 |
| 11264560 | Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applications | Jodi Mari Iwata, Guenole Jan, Santiago Serrano Guisan, Luc Thomas | 2022-03-01 |