Issued Patents 2022
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11532732 | Multi-gate device and method of fabrication thereof | Yi-Ruei Jhan, Kuo-Cheng Chiang, Kuan-Lun Cheng, Chih-Hao Wang | 2022-12-20 |
| 11532725 | Method for forming sidewall spacers and semiconductor devices fabricated thereof | Kuo-Cheng Chiang, Shi Ning Ju, Yi-Ruei Jhan, Kuan-Lun Cheng, Chih-Hao Wang | 2022-12-20 |
| 11527533 | FinFET pitch scaling | Yi-Ruei Jhan, Kuo-Cheng Chiang, Chih-Hao Wang | 2022-12-13 |
| 11502187 | Semiconductor device structure and method for forming the same | Kuo-Cheng Ching, Zhi-Chang Lin, Chih-Hao Wang, Shi Ning Ju | 2022-11-15 |
| 11495677 | Semiconductor devices and methods of manufacturing thereof | Yi-Ruei Jhan, Kuo-Cheng Chiang, Kuan-Lun Cheng, Chih-Hao Wang | 2022-11-08 |
| 11456368 | Semiconductor device structure with hard mask layer over fin structure and method for forming the same | Kuo-Cheng Chiang, Huan-Chieh Su, Shi Ning Ju, Chih-Hao Wang | 2022-09-27 |
| 11355398 | Semiconductor device structure and methods of forming the same | Kuo-Cheng Chiang, Shang-Wen Chang, Ching-Wei Tsai, Kuan-Lun Cheng, Chih-Hao Wang | 2022-06-07 |
| 11355396 | Method of forming a semiconductor structure including laterally etching semiconductor material in fin recess region and depositing metal gate therein | Kuo-Cheng Ching, Zhi-Chang Lin, Shi Ning Ju, Chih-Hao Wang | 2022-06-07 |
| 11349016 | Fin field effect transistor (FinFET) with a liner layer | Kuo-Cheng Ching, Shi Ning Ju, Chih-Hao Wang | 2022-05-31 |
| 11329165 | Structure and formation method of semiconductor device with isolation structure | Kuo-Cheng Chiang, Huan-Chieh Su, Shi Ning Ju, Chih-Hao Wang | 2022-05-10 |
| 11328963 | Multi-gate device and related methods | Huan-Chieh Su, Zhi-Chang Lin, Shi Ning Ju, Yi-Ruei Jhan, Kuo-Cheng Chiang +1 more | 2022-05-10 |
| 11302580 | Nanosheet thickness | Wen-Ting Lan, Shi Ning Ju, Kuo-Cheng Chiang, Chih-Hao Wang | 2022-04-12 |