Issued Patents 2022
Showing 1–6 of 6 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11532740 | Semiconductor structure, HEMT structure and method of forming the same | Yao-Chung Chang, Po-Chih Chen, Chun Lin Tsai | 2022-12-20 |
| 11521915 | Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV) | Yun-Hsiang Wang, Chun Lin Tsai, Po-Chih Chen | 2022-12-06 |
| 11522077 | Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance | Man-Ho Kwan, Fu-Wei Yao, Chun Lin Tsai, Ting-Fu Chang | 2022-12-06 |
| 11404557 | Method of forming a high electron mobility transistor | Chun-Wei Hsu, Fu-Wei Yao, Chen-Ju Yu, Fu-Chih Yang, Chun Lin Tsai | 2022-08-02 |
| 11349023 | Integration of p-channel and n-channel E-FET III-V devices without parasitic channels | Man-Ho Kwan, Fu-Wei Yao, Chun Lin Tsai, Ting-Fu Chang | 2022-05-31 |
| 11222968 | HEMT device structure and manufacturing method thereof | Po-Chih Chen, Yao-Chung Chang, Chun Lin Tsai | 2022-01-11 |