Issued Patents 2022
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11532740 | Semiconductor structure, HEMT structure and method of forming the same | Yao-Chung Chang, Po-Chih Chen, Jiun-Lei Jerry Yu | 2022-12-20 |
| 11522077 | Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance | Man-Ho Kwan, Fu-Wei Yao, Jiun-Lei Jerry Yu, Ting-Fu Chang | 2022-12-06 |
| 11521915 | Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV) | Yun-Hsiang Wang, Jiun-Lei Jerry Yu, Po-Chih Chen | 2022-12-06 |
| 11450749 | Electrode structure for vertical group III-V device | Yao-Chung Chang, Ru-Yi Su, Wei Wang, Wei-Chen Yang | 2022-09-20 |
| 11430702 | Semiconductor structure and method for manufacturing thereof | Man-Ho Kwan, Fu-Wei Yao, Ru-Yi Su, Alexander Kalnitsky | 2022-08-30 |
| 11424359 | Semiconductor device structure with high voltage device | Hung-Chou Lin, Yi-Cheng Chiu, Karthick Murukesan, Yi-Min Chen, Shiuan-Jeng Lin +4 more | 2022-08-23 |
| 11410991 | Series resistor over drain region in high voltage device | Ker Hsiao Huo, Fu-Chih Yang, Yi-Min Chen, Chih-Yuan Chan | 2022-08-09 |
| 11404557 | Method of forming a high electron mobility transistor | Chun-Wei Hsu, Jiun-Lei Jerry Yu, Fu-Wei Yao, Chen-Ju Yu, Fu-Chih Yang | 2022-08-02 |
| 11349023 | Integration of p-channel and n-channel E-FET III-V devices without parasitic channels | Man-Ho Kwan, Fu-Wei Yao, Jiun-Lei Jerry Yu, Ting-Fu Chang | 2022-05-31 |
| 11222968 | HEMT device structure and manufacturing method thereof | Po-Chih Chen, Jiun-Lei Jerry Yu, Yao-Chung Chang | 2022-01-11 |