Issued Patents 2022
Showing 25 most recent of 39 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11527647 | Field effect transistor (FET) devices | Reinaldo Vega, Cheng Chi, Praneet Adusumilli | 2022-12-13 |
| 11527616 | Vertical transport CMOS transistors with asymmetric threshold voltage | Choonghyun Lee, Jingyun Zhang, Alexander Reznicek | 2022-12-13 |
| 11527574 | Stacked resistive memory with individual switch control | Jingyun Zhang, Pouya Hashemi, Alexander Reznicek, Choonghyun Lee | 2022-12-13 |
| 11515217 | Complementary metal oxide semiconductor device having fin field effect transistors with a common metal gate | Choonghyun Lee, Pouya Hashemi, Jingyun Zhang | 2022-11-29 |
| 11515214 | Threshold voltage adjustment by inner spacer material selection | Jingyun Zhang, Choonghyun Lee, Pouya Hashemi | 2022-11-29 |
| 11508438 | RRAM filament location based on NIR emission | Franco Stellari, Cyril Cabral, Jr., Eduard A. Cartier, Martin M. Frank, Peilin Song +1 more | 2022-11-22 |
| 11502252 | Resistive switching memory cell | Praneet Adusumilli, Reinaldo Vega, Cheng Chi | 2022-11-15 |
| 11501023 | Secure chip identification using resistive processing unit as a physically unclonable function | Arvind Kumar, Dirk Pfeiffer | 2022-11-15 |
| 11495668 | Full air-gap spacers for gate-all-around nanosheet field effect transistors | Pouya Hashemi, Choonghyun Lee, Alexander Reznicek, Jingyun Zhang | 2022-11-08 |
| 11495669 | Full air-gap spacers for gate-all-around nanosheet field effect transistors | Pouya Hashemi, Choonghyun Lee, Alexander Reznicek, Jingyun Zhang | 2022-11-08 |
| 11481611 | RRAM crossbar array structure for multi-task learning | Reinaldo Vega, Hari V. Mallela | 2022-10-25 |
| 11456416 | Resistive switching memory cell | Praneet Adusumilli, Reinaldo Vega, Cheng Chi | 2022-09-27 |
| 11456308 | Low-voltage flash memory integrated with a vertical field effect transistor | Bahman Hekmatshoartabari, Alexander Reznicek, Nanbo Gong | 2022-09-27 |
| 11444165 | Asymmetric threshold voltages in semiconductor devices | Alexander Reznicek, Jingyun Zhang, Choonghyun Lee, Pouya Hashemi | 2022-09-13 |
| 11437102 | Memory erasure using proximity heaters | Guy M. Cohen, Nanbo Gong | 2022-09-06 |
| 11430513 | Non-volatile memory structure and method for low programming voltage for cross bar array | Soon-Cheon Seo, Youngseok Kim, Dexin Kong, Hiroyuki Miyazoe | 2022-08-30 |
| 11430954 | Resistance drift mitigation in non-volatile memory cell | Praneet Adusumilli, Anirban Chandra, Cheng Chi, Reinaldo Vega | 2022-08-30 |
| 11430660 | Confined work function material for gate-all around transistor devices | Jingyun Zhang, Choonghyun Lee, Alexander Reznicek, Pouya Hashemi | 2022-08-30 |
| 11430510 | Multi-level ferroelectric field-effect transistor devices | Nanbo Gong, Guy M. Cohen | 2022-08-30 |
| 11424362 | NCFETS with complimentary capacitance matching using stacked n-type and p-type nanosheets | Reinaldo Vega, Cheng Chi, Praneet Adusumilli | 2022-08-23 |
| 11387342 | Multi threshold voltage for nanosheet | Jingyun Zhang, Choonghyun Lee, Alexander Reznicek | 2022-07-12 |
| 11379125 | Trusted field programmable gate array | Jean-Olivier Plouchart, Arvind Kumar, Dirk Pfeiffer | 2022-07-05 |
| D956001 | Programmable controller | Hiroyuki Kato, Hiroyuki Onojima, Kazuma Takahata, Mitsuhiro Yamada, Atsutomo Hayamizu | 2022-06-28 |
| 11362274 | Laterally switching cell having sub-stoichiometric metal oxide active layer | John Rozen, Martin M. Frank, Yohei Ogawa | 2022-06-14 |
| 11335730 | Vertical resistive memory device with embedded selectors | Praneet Adusumilli, Reinaldo Vega, Cheng Chi | 2022-05-17 |