Issued Patents 2021
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11049797 | Method for manufacturing a semiconductor structure comprising a semiconductor device layer formed on a tem, porary substrate having a graded SiGe etch stop layer therebetween | Yu-Hung Cheng, Shih Pei Chou, Yeur-Luen Tu, Alexander Kalnitsky, Wei-Li Chen | 2021-06-29 |
| 10971406 | Method of forming source/drain regions of transistors | Yu-Hung Cheng, Ching-Wei Tsai, Yeur-Luen Tu, Wei-Li Chen | 2021-04-06 |