Issued Patents 2021
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11205647 | Semiconductor device and method of manufacture | Shih-Yao Lin, Kuei-Yu Kao, Chi-Sheng Lai, Chih-Han Lin, Wei-Chung Sun +1 more | 2021-12-21 |
| 11152249 | Methods of forming FinFET devices | Jih-Jse Lin, Ryan Chia-Jen Chen, Fang Chen | 2021-10-19 |
| 11145051 | Three-dimensional modeling of an object | Eric Michael Gros, Junli Ping, Arpit Jain, Peter Henry Tu | 2021-10-12 |
| 11133307 | FinFETs with locally thinned gate structures and having different distances therebetween | Chih-Han Lin, Kuei-Yu Kao, Shih-Yao Lin, Chao-Cheng Chen, Syun-Ming Jang | 2021-09-28 |
| 11127741 | Methods of manufacturing transistor gate structures by local thinning of dummy gate stacks using an etch barrier | Chih-Han Lin, Kuei-Yu Kao, Shih-Yao Lin, Chao-Cheng Chen, Syun-Ming Jang | 2021-09-21 |
| 11114549 | Semiconductor structure cutting process and structures formed thereby | Ryan Chia-Jen Chen, Yi-Chun Chen, Yu-Hsien Lin, Li-Wei Yin, Tzu-Wen Pan +2 more | 2021-09-07 |
| 11056478 | Metal gate structure cutting process | Shiang-Bau Wang, Ryan Chia-Jen Chen, Shu-Yuan Ku | 2021-07-06 |
| 11043576 | FinFET device and method | Chih-Han Lin, Chao-Cheng Chen | 2021-06-22 |
| 11031501 | Isolation structure having different distances to adjacent FinFET devices | Chang-Yun Chang, Shu-Yuan Ku | 2021-06-08 |
| 11031290 | Semiconductor structure with cutting depth control and method for fabricating the same | Chih-Chang Hung, Shu-Yuan Ku, I-Wei Yang, Yi-Hsuan Hsiao, Ryan Chia-Jen Chen | 2021-06-08 |
| 10943828 | Residue-free metal gate cutting for fin-like field effect transistor | Ya-Yi Tsai, Yi-Hsuan Hsiao, Shu-Yuan Ku, Ryan Chia-Jen Chen | 2021-03-09 |