Issued Patents 2021
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11152249 | Methods of forming FinFET devices | Jih-Jse Lin, Fang Chen, Ming-Ching Chang | 2021-10-19 |
| 11120997 | Surface treatment for etch tuning | Shih-Chiang Chen, Chun-Hung Lee, Hung-Wei Lin, Lung-Kai Mao | 2021-09-14 |
| 11114549 | Semiconductor structure cutting process and structures formed thereby | Ming-Ching Chang, Yi-Chun Chen, Yu-Hsien Lin, Li-Wei Yin, Tzu-Wen Pan +2 more | 2021-09-07 |
| 11094825 | FinFET device with fins of non-uniform width | Chia Tai Lin, Yih-Ann Lin, An-Shen Chang, Chao-Cheng Chen | 2021-08-17 |
| 11069579 | Semiconductor device and method | Shiang-Bau Wang, Li-Wei Yin, Chen-Huang Huang, Ming-Jhe Sie | 2021-07-20 |
| 11063043 | Method for forming fin field effect transistor (FinFet) device structure | Chung-Shu Wu, Shu-Uei Jang, Wei-Yeh TANG, An Chyi Wei | 2021-07-13 |
| 11056478 | Metal gate structure cutting process | Shiang-Bau Wang, Shu-Yuan Ku, Ming-Ching Chang | 2021-07-06 |
| 11031290 | Semiconductor structure with cutting depth control and method for fabricating the same | Chih-Chang Hung, Shu-Yuan Ku, I-Wei Yang, Yi-Hsuan Hsiao, Ming-Ching Chang | 2021-06-08 |
| 10991627 | Methods for forming fin field-effect transistors | Yih-Ann Lin, Chia Tai Lin, Chao-Cheng Chen | 2021-04-27 |
| 10957600 | Methods for forming Fin field-effect transistors | Yih-Ann Lin, Chia Tai Lin, Chao-Cheng Chen | 2021-03-23 |
| 10943828 | Residue-free metal gate cutting for fin-like field effect transistor | Ya-Yi Tsai, Yi-Hsuan Hsiao, Shu-Yuan Ku, Ming-Ching Chang | 2021-03-09 |
| 10916477 | Fin field-effect transistor devices and methods of forming the same | Chih-Chang Hung, Chieh-Ning Feng, Chun-Liang Lai, Yih-Ann Lin | 2021-02-09 |