Issued Patents 2020
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10872970 | Source and drain formation technique for fin-like field effect transistor | Chun Hsiung Tsai, Ziwei Fang | 2020-12-22 |
| 10868129 | Gate spacer and methods of forming | Chun Hsiung Tsai | 2020-12-15 |
| 10749008 | Gate structure, semiconductor device and the method of forming semiconductor device | Chun Hsiung Tsai, Chien-Tai Chan, Ziwei Fang, Kei-Wei Chen, Huai-Tei Yang | 2020-08-18 |
| 10749010 | Method for manufacturing finFET structure with doped region | Shahaji B. More, Chun Hsiung Tsai, Cheng-Yi Peng, Shih-Chieh Chang | 2020-08-18 |
| 10741662 | Gate spacer and method of forming | Chun Hsiung Tsai | 2020-08-11 |
| 10686074 | Fin field effect transistor (FinFET) device structure with doped region in source/drain structure and method for forming the same | Chun Hsiung Tsai, Shahaji B. More, Cheng-Yi Peng, Yu-Ming Lin, Ziwei Fang | 2020-06-16 |
| 10651287 | Method for forming source/drain contacts | Shahaji B. More, Chun Hsiung Tsai, Shih-Chieh Chang, Cheng-Yi Peng | 2020-05-12 |
| 10535768 | Semiconductor structure | Chun Hsiung Tsai, Kei-Wei Chen | 2020-01-14 |