IC

I-Ching Chen

TSMC: 2 patents #1,197 of 3,471Top 35%
📍 Zhubeikou, TW: #60 of 130 inventorsTop 50%
Overall (2020): #165,973 of 565,922Top 30%
2
Patents 2020

Issued Patents 2020

Showing 1–2 of 2 patents

Patent #TitleCo-InventorsDate
10763426 Method for forming a flat bottom electrode via (BEVA) top surface for memory Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Sheng-Hung Shih +3 more 2020-09-01
10566519 Method for forming a flat bottom electrode via (BEVA) top surface for memory Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Sheng-Hung Shih +3 more 2020-02-18