| 10878914 |
Memory device with compensation for program speed variations due to block oxide thinning |
Ching-Huang Lu, Vinh Diep |
2020-12-29 |
| 10811109 |
Multi-pass programming process for memory device which omits verify test in first program pass |
Ching-Huang Lu, Vinh Diep, Yingda Dong |
2020-10-20 |
| 10804282 |
Three-dimensional memory devices using carbon-doped aluminum oxide backside blocking dielectric layer for etch resistivity enhancement and methods of making the same |
Fei Zhou, Ching-Huang Lu, Raghuveer S. Makala |
2020-10-13 |
| 10741253 |
Memory device with compensation for erase speed variations due to blocking oxide layer thinning |
Ching-Huang Lu, Vinh Diep |
2020-08-11 |
| 10665301 |
Memory device with compensation for program speed variations due to block oxide thinning |
Ching-Huang Lu, Vinh Diep |
2020-05-26 |