Issued Patents 2019
Showing 1–4 of 4 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10510894 | Isolation structure having different distances to adjacent FinFET devices | Ming-Ching Chang, Shu-Yuan Ku | 2019-12-17 |
| 10461078 | Creating devices with multiple threshold voltage by cut-metal-gate process | Ming-Chang Wen, Hsien-Chin Lin, Bone-Fong Wu, Ya-Hsiu Lin | 2019-10-29 |
| 10355108 | Method of forming a fin field effect transistor comprising two etching steps to define a fin structure | Feng Yuan, Hung-Ming Chen, Tsung-Lin Lee, Clement Hsingjen Wann | 2019-07-16 |
| 10319581 | Cut metal gate process for reducing transistor spacing | Ming-Chang Wen, Hsien-Chin Lin, Hung-Kai Chen | 2019-06-11 |