Issued Patents 2019
Showing 25 most recent of 31 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522367 | Gettering layer formation and substrate | Bin Yang, Gengming Tao | 2019-12-31 |
| 10490639 | Low collector contact resistance heterojunction bipolar transistors | Gengming Tao, Bin Yang | 2019-11-26 |
| 10483287 | Double gate, flexible thin-film transistor (TFT) complementary metal-oxide semiconductor (MOS) (CMOS) circuits and related fabrication methods | Bin Yang, Gengming Tao | 2019-11-19 |
| 10482929 | Non-volative (NV) memory (NVM) matrix circuits employing NVM matrix circuits for performing matrix computations | Bin Yang, Gengming Tao | 2019-11-19 |
| 10482743 | Flexible temperature sensor including conformable electronics | Sanjay Gupta, Kevin Dowling, Isaiah Kacyvenski, Melissa Ceruolo, Barry G. Ives | 2019-11-19 |
| 10475889 | Gallium nitride power amplifier integration with metal-oxide-semiconductor devices | Gengming Tao, Bin Yang | 2019-11-12 |
| 10460817 | Multiple (multi-) level cell (MLC) non-volatile (NV) memory (NVM) matrix circuits for performing matrix computations with multi-bit input vectors | Seung H. Kang, Wei-Chuan Chen | 2019-10-29 |
| 10461164 | Compound semiconductor field effect transistor with self-aligned gate | Bin Yang, Gengming Tao, Periannan Chidambaram | 2019-10-29 |
| 10453774 | Thermally enhanced substrate | Kai Liu, Bin Yang | 2019-10-22 |
| 10446743 | Double-patterned magneto-resistive random access memory (MRAM) for reducing magnetic tunnel junction (MTJ) pitch for increased MRAM bit cell density | Wei-Chuan Chen | 2019-10-15 |
| 10438654 | Transpose static random access memory (SRAM) bit cells configured for horizontal and vertical read operations | Yandong Gao | 2019-10-08 |
| 10431581 | Complementary metal-oxide semiconductor (CMOS) integration with compound semiconductor devices | Gengming Tao, Bin Yang | 2019-10-01 |
| 10431278 | Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for ambient temperature | Wah Nam Hsu, Wei-Chuan Chen, Seung H. Kang | 2019-10-01 |
| 10424380 | Physically unclonable function (PUF) memory employing static random access memory (SRAM) bit cells with added passive resistance to enhance transistor imbalance for improved PUF output reproducibility | Jianguo Yao, Seung H. Kang | 2019-09-24 |
| 10410714 | Multi-level cell (MLC) static random access memory (SRAM) (MLC SRAM) cells configured to perform multiplication operations | Seung H. Kang, Venkat Rangan, Rashid Ahmed Akbar Attar, Nicholas Ka Ming Stevens-Yu | 2019-09-10 |
| 10396188 | Heterojunction bipolar transistors and method of fabricating the same | Bin Yang, Gengming Tao | 2019-08-27 |
| 10347821 | Electrode structure for resistive memory device | Yu Lu, Junjing Bao, Seung H. Kang | 2019-07-09 |
| 10340395 | Semiconductor variable capacitor using threshold implant region | Fabio Alessio Marino, Qingqing Liang, Francesco Carobolante, Seung H. Kang | 2019-07-02 |
| 10332590 | Static random access memory (SRAM) bit cells employing current mirror-gated read ports for reduced power consumption | Jianguo Yao | 2019-06-25 |
| 10319830 | Heterojunction bipolar transistor power amplifier with backside thermal heatsink | Bin Yang, Gengming Tao | 2019-06-11 |
| 10312244 | Bi-stable static random access memory (SRAM) bit cells that facilitate direct writing for storage | Seung H. Kang, Bin Yang, Gengming Tao | 2019-06-04 |
| 10290352 | System, apparatus, and method of programming a one-time programmable memory circuit having dual programming regions | Xiao Lu, Xiaonan Chen, Zhongze Wang | 2019-05-14 |
| 10283190 | Transpose non-volatile (NV) memory (NVM) bit cells and related data arrays configured for row and column, transpose access operations | — | 2019-05-07 |
| 10283650 | Silicon on insulator (SOI) transcap integration providing front and back gate capacitance tuning | Bin Yang, Gengming Tao | 2019-05-07 |
| 10242149 | Enhancing integrated circuit noise performance | Suo Ming Pu, Xiao Feng Tang, Bo Yu | 2019-03-26 |