Issued Patents 2019
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522367 | Gettering layer formation and substrate | Xia Li, Bin Yang | 2019-12-31 |
| 10490639 | Low collector contact resistance heterojunction bipolar transistors | Bin Yang, Xia Li | 2019-11-26 |
| 10483287 | Double gate, flexible thin-film transistor (TFT) complementary metal-oxide semiconductor (MOS) (CMOS) circuits and related fabrication methods | Xia Li, Bin Yang | 2019-11-19 |
| 10482929 | Non-volative (NV) memory (NVM) matrix circuits employing NVM matrix circuits for performing matrix computations | Xia Li, Bin Yang | 2019-11-19 |
| 10475889 | Gallium nitride power amplifier integration with metal-oxide-semiconductor devices | Xia Li, Bin Yang | 2019-11-12 |
| 10461164 | Compound semiconductor field effect transistor with self-aligned gate | Bin Yang, Xia Li, Periannan Chidambaram | 2019-10-29 |
| 10431581 | Complementary metal-oxide semiconductor (CMOS) integration with compound semiconductor devices | Xia Li, Bin Yang | 2019-10-01 |
| 10396188 | Heterojunction bipolar transistors and method of fabricating the same | Bin Yang, Xia Li | 2019-08-27 |
| 10319830 | Heterojunction bipolar transistor power amplifier with backside thermal heatsink | Bin Yang, Xia Li | 2019-06-11 |
| 10312244 | Bi-stable static random access memory (SRAM) bit cells that facilitate direct writing for storage | Xia Li, Seung H. Kang, Bin Yang | 2019-06-04 |
| 10283650 | Silicon on insulator (SOI) transcap integration providing front and back gate capacitance tuning | Xia Li, Bin Yang | 2019-05-07 |
| 10224368 | Voltage-switched magneto-resistive random access memory (MRAM) employing separate read operation circuit paths from a shared spin torque write operation circuit path | Xia Li, Jimmy Jianan Kan, Seung H. Kang, Bin Yang | 2019-03-05 |
| 10205018 | Planar double gate semiconductor device | Xia Li, Bin Yang | 2019-02-12 |
| 10186514 | Bi-stable static random access memory (SRAM) bit cells formed from III-V compounds and configured to achieve higher operating speeds | Xia Li, Bin Yang | 2019-01-22 |
| 10170610 | Pseudomorphic high electron mobility transistor with low contact resistance | Bin Yang, Xia Li | 2019-01-01 |