| 10460817 |
Multiple (multi-) level cell (MLC) non-volatile (NV) memory (NVM) matrix circuits for performing matrix computations with multi-bit input vectors |
Xia Li, Seung H. Kang |
2019-10-29 |
| 10446743 |
Double-patterned magneto-resistive random access memory (MRAM) for reducing magnetic tunnel junction (MTJ) pitch for increased MRAM bit cell density |
Xia Li |
2019-10-15 |
| 10431278 |
Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for ambient temperature |
Xia Li, Wah Nam Hsu, Seung H. Kang |
2019-10-01 |
| 10266765 |
Europium-doped phosphor materials |
Lun Ma |
2019-04-23 |
| 10249814 |
Dynamic memory protection |
Chando Park, Seung H. Kang, Sungryul Kim |
2019-04-02 |
| 10210920 |
Magnetic tunnel junction (MTJ) devices with varied breakdown voltages in different memory arrays fabricated in a same semiconductor die to facilitate different memory applications |
Xia Li, Wah Nam Hsu, Seung H. Kang |
2019-02-19 |
