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Adaptive data rate control method and adaptive data rate control system |
Young-Hwan Yoo |
2019-11-26 |
| 10460780 |
Magneto-resistive random access memory (MRAM) employing an integrated physically unclonable function (PUF) memory |
Chando Park, Seung H. Kang |
2019-10-29 |
| 10381060 |
High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array |
Jimmy Jianan Kan, Chando Park, Peiyuan Wang, Seung H. Kang |
2019-08-13 |
| 10340297 |
Display device |
KWIHYUN KIM, Yoon-Jang Kim, Yunseok Lee |
2019-07-02 |
| 10319425 |
Offset-cancellation sensing circuit (OCSC)-based non-volatile (NV) memory circuits |
Seong-Ook Jung, Byungkyu Song, Jung Pill Kim, Seung H. Kang |
2019-06-11 |
| 10311930 |
One-time programming (OTP) magneto-resistive random access memory (MRAM) bit cells in a physically unclonable function (PUF) memory in breakdown to a memory state from a previous read operation to provide PUF operations |
Chando Park, Seung H. Kang |
2019-06-04 |
| 10290340 |
Offset-canceling (OC) write operation sensing circuits for sensing switching in a magneto-resistive random access memory (MRAM) bit cell in an MRAM for a write operation |
Seong-Ook Jung, Sara Choi, Hong Keun Ahn, Seung H. Kang |
2019-05-14 |
| 10263645 |
Error correction and decoding |
Seong-Ook Jung, Sara Choi, Byung Kyu Song, Taehui Na, Jisu Kim +3 more |
2019-04-16 |
| 10249814 |
Dynamic memory protection |
Chando Park, Seung H. Kang, Wei-Chuan Chen |
2019-04-02 |
| 10224087 |
Sensing voltage based on a supply voltage applied to magneto-resistive random access memory (MRAM) bit cells in an MRAM for tracking write operations to the MRAM bit cells |
Seong-Ook Jung, Sara Choi, Hong Keun Ahn, Seung H. Kang |
2019-03-05 |
