| 10510390 |
Magnetic exchange coupled MTJ free layer having low switching current and high data retention |
Guohan Hu, Jeong-Heon Park |
2019-12-17 |
| 10510391 |
Magnetic exchange coupled MTJ free layer having low switching current and high data retention |
Guohan Hu, Jeong-Heon Park |
2019-12-17 |
| 10468455 |
Simplified double magnetic tunnel junctions |
Guohan Hu, Younghyun Kim, Jeong-Heon Park |
2019-11-05 |
| 10453509 |
Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention |
Guohan Hu |
2019-10-22 |
| 10437665 |
Bad bit register for memory |
John K. DeBrosse |
2019-10-08 |
| 10424727 |
Spin transfer torque cell for magnetic random access memory |
Michael C. Gaidis, Janusz J. Nowak |
2019-09-24 |
| 10394647 |
Bad bit register for memory |
John K. DeBrosse |
2019-08-27 |
| 10374145 |
In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers |
Stephen L. Brown, Guohan Hu, Jonathan Z. Sun |
2019-08-06 |
| 10361361 |
Thin reference layer for STT MRAM |
Guohan Hu, Younghyun Kim |
2019-07-23 |
| 10332576 |
Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention |
Guohan Hu |
2019-06-25 |
| 10326074 |
Spin transfer torque cell for magnetic random access memory |
Michael C. Gaidis, Janusz J. Nowak |
2019-06-18 |
| 10294561 |
Growth of metal on a dielectric |
Guohan Hu |
2019-05-21 |
| 10236438 |
Multibit self-reference thermally assisted MRAM |
Anthony J. Annunziata, Lucian Prejbeanu, Philip L. Trouilloud |
2019-03-19 |
| 10229722 |
Three terminal spin hall MRAM |
John K. DeBrosse, Jonathan Zanhong Sun |
2019-03-12 |
| 10170688 |
Magnetic field sensor based on topological insulator and insulating coupler materials |
Anthony J. Annunziata, Joel D. Chudow |
2019-01-01 |
| 10170178 |
Secure off-chip MRAM |
John K. DeBrosse, William E. Hall, Hillery C. Hunter, Jeffrey A. Stuecheli |
2019-01-01 |
