Issued Patents 2019
Showing 1–6 of 6 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10510390 | Magnetic exchange coupled MTJ free layer having low switching current and high data retention | Guohan Hu, Daniel C. Worledge | 2019-12-17 |
| 10510391 | Magnetic exchange coupled MTJ free layer having low switching current and high data retention | Guohan Hu, Daniel C. Worledge | 2019-12-17 |
| 10468455 | Simplified double magnetic tunnel junctions | Guohan Hu, Younghyun Kim, Daniel C. Worledge | 2019-11-05 |
| 10388859 | Method of manufacturing a magnetoresistive random access memory device and method of manufacturing a semiconductor chip including the same | Dae-Shik Kim, Gwan-Hyeob Koh | 2019-08-20 |
| 10256399 | Fabricating a cap layer for a magnetic random access memory (MRAM) device | Guohan Hu, Kwangseok KIM, Younghyun Kim, Jung Hyuk Lee | 2019-04-09 |
| 10230043 | Boron segregation in magnetic tunnel junctions | Guohan Hu, Younghyun Kim, Chandrasekara Kothandaraman | 2019-03-12 |