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Magnetic exchange coupled MTJ free layer having low switching current and high data retention |
Jeong-Heon Park, Daniel C. Worledge |
2019-12-17 |
| 10510390 |
Magnetic exchange coupled MTJ free layer having low switching current and high data retention |
Jeong-Heon Park, Daniel C. Worledge |
2019-12-17 |
| 10468455 |
Simplified double magnetic tunnel junctions |
Younghyun Kim, Jeong-Heon Park, Daniel C. Worledge |
2019-11-05 |
| 10453509 |
Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention |
Daniel C. Worledge |
2019-10-22 |
| 10374145 |
In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers |
Stephen L. Brown, Jonathan Z. Sun, Daniel C. Worledge |
2019-08-06 |
| 10361361 |
Thin reference layer for STT MRAM |
Younghyun Kim, Daniel C. Worledge |
2019-07-23 |
| 10347827 |
Perpendicular magnetic anisotropy free layers with iron insertion and oxide interfaces for spin transfer torque magnetic random access memory |
— |
2019-07-09 |
| 10332576 |
Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention |
Daniel C. Worledge |
2019-06-25 |
| 10294561 |
Growth of metal on a dielectric |
Daniel C. Worledge |
2019-05-21 |
| 10256399 |
Fabricating a cap layer for a magnetic random access memory (MRAM) device |
Kwangseok KIM, Younghyun Kim, Jung Hyuk Lee, Jeong-Heon Park |
2019-04-09 |
| 10230043 |
Boron segregation in magnetic tunnel junctions |
Younghyun Kim, Chandrasekara Kothandaraman, Jeong-Heon Park |
2019-03-12 |
