Issued Patents 2019
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10396078 | Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming same | Christopher D. Sheraw, Timothy J. McArdle, Matthew W. Stoker, Mira Park, George R. Mulfinger +1 more | 2019-08-27 |
| 10393635 | Semiconductor manufactured nano-structures for microbe or virus trapping or destruction | Yann Astier, David Esteban, Henry K. Utomo | 2019-08-27 |
| 10388654 | Methods of forming a gate-to-source/drain contact structure | George R. Mulfinger, Timothy J. McArdle, Thomas Merbeth, Omur Isil Aydin, Ruilong Xie | 2019-08-20 |
| 10326007 | Post gate silicon germanium channel condensation and method for producing the same | George R. Mulfinger, Ryan Sporer, Timothy J. McArdle | 2019-06-18 |
| 10262903 | Boundary spacer structure and integration | Yi Qi, Hsien-Ching Lo, Jianwei Peng | 2019-04-16 |
| 10246730 | Semiconductor manufactured nano-structures for microbe or virus trapping or destruction | Yann Astier, David Esteban, Henry K. Utomo | 2019-04-02 |
| 10243077 | FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth | Eric C. Harley, Yue Ke, Rishikesh Krishnan, Keith H. Tabakman, Henry K. Utomo | 2019-03-26 |
| 10236343 | Strain retention semiconductor member for channel SiGe layer of pFET | Dina H. Triyoso, Timothy J. McArdle, Amy L. Child, George R. Mulfinger | 2019-03-19 |
| 10204984 | Methods, apparatus and system for forming increased surface regions within EPI structures for improved trench silicide | Matthew W. Stoker, Timothy J. McArdle, Annie Levesque | 2019-02-12 |