Issued Patents 2019
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10431683 | Method for making a semiconductor device with a compressive stressed channel | Emmanuel Augendre, Remi Coquand, Nicolas Loubet | 2019-10-01 |
| 10347721 | Method to increase strain in a semiconductor region for forming a channel of the transistor | Laurent Grenouillet, Raluca Tiron | 2019-07-09 |
| 10269930 | Method for producing a semiconductor device with self-aligned internal spacers | Emmanuel Augendre, Remi Coquand | 2019-04-23 |
| 10263077 | Method of fabricating a FET transistor having a strained channel | Remi Coquand | 2019-04-16 |
| 10256102 | Method for fabricating a field effect transistor having a surrounding grid | Remi Coquand, Emmanuel Augendre | 2019-04-09 |
| 10217849 | Method for making a semiconductor device with nanowire and aligned external and internal spacers | Sylvain Barraud, Emmanuel Augendre, Remi Coquand | 2019-02-26 |
| 10217842 | Method for making a semiconductor device with self-aligned inner spacers | Emmanuel Augendre, Remi Coquand | 2019-02-26 |
| 10205021 | Method of fabrication of a semiconductor substrate having at least a tensilely strained semiconductor portion | — | 2019-02-12 |
| 10170621 | Method of making a transistor having a source and a drain obtained by recrystallization of semiconductor | Perrine Batude, Flavia PIEGAS LUCE | 2019-01-01 |