| 10121794 |
Three-dimensional memory device having epitaxial germanium-containing vertical channel and method of making thereof |
Marika Gunji-Yoneoka, Atsushi Suyama, Jayavel Pachamuthu, Tsuyoshi Hada, Daewung Kang +4 more |
2018-11-06 |
| 10050054 |
Three-dimensional memory device having drain select level isolation structure and method of making thereof |
Yanli Zhang, Johann Alsmeier, Raghuveer S. Makala, Senaka Kanakamedala, Rahul Sharangpani |
2018-08-14 |
| 10038006 |
Through-memory-level via structures for a three-dimensional memory device |
Yoko Furihata, Jixin Yu, Hiroyuki Ogawa, Jin Liu, Johann Alsmeier |
2018-07-31 |
| 10020363 |
Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device |
Hiroyuki Ogawa, Yasuo Kasagi, Satoshi Shimizu, Kazuyo Matsumoto, Yohei Masamori +2 more |
2018-07-10 |
| 10008570 |
Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device |
Jixin Yu, Kento KITAMURA, Tong Zhang, Chun Ge, Yanli Zhang +6 more |
2018-06-26 |
| 9985098 |
Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device |
Kazuyo Matsumoto, Yasuo Kasagi, Satoshi Shimizu, Hiroyuki Ogawa, Yohei Masamori +2 more |
2018-05-29 |
| 9972640 |
Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof |
Murshed Chowdhury, Jin Liu, Johann Alsmeier |
2018-05-15 |
| 9959932 |
Grouping memory cells into sub-blocks for program speed uniformity |
Zhengyi Zhang, Yingda Dong, Johann Alsmeier |
2018-05-01 |
| 9953992 |
Mid-plane word line switch connection for CMOS under three-dimensional memory device and method of making thereof |
Hiroyuki Ogawa |
2018-04-24 |
| 9935123 |
Within array replacement openings for a three-dimensional memory device |
Masatoshi Nishikawa, Masafumi Miyamoto |
2018-04-03 |
| 9922987 |
Three-dimensional memory device containing separately formed drain select transistors and method of making thereof |
Yuki Mizutani, Fumiaki Toyama, Shigehiro Fujino, Johann Alsmeier |
2018-03-20 |
| 9917100 |
Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the same |
Tong Zhang, Johann Alsmeier, Jin Liu, Yanli Zhang |
2018-03-13 |