Issued Patents 2018
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10121794 | Three-dimensional memory device having epitaxial germanium-containing vertical channel and method of making thereof | Marika Gunji-Yoneoka, Atsushi Suyama, Jayavel Pachamuthu, Tsuyoshi Hada, Daewung Kang +4 more | 2018-11-06 |
| 10050054 | Three-dimensional memory device having drain select level isolation structure and method of making thereof | Yanli Zhang, Johann Alsmeier, Raghuveer S. Makala, Senaka Kanakamedala, Rahul Sharangpani | 2018-08-14 |
| 10038006 | Through-memory-level via structures for a three-dimensional memory device | Yoko Furihata, Jixin Yu, Hiroyuki Ogawa, Jin Liu, Johann Alsmeier | 2018-07-31 |
| 10020363 | Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device | Hiroyuki Ogawa, Yasuo Kasagi, Satoshi Shimizu, Kazuyo Matsumoto, Yohei Masamori +2 more | 2018-07-10 |
| 10008570 | Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device | Jixin Yu, Kento KITAMURA, Tong Zhang, Chun Ge, Yanli Zhang +6 more | 2018-06-26 |
| 9985098 | Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device | Kazuyo Matsumoto, Yasuo Kasagi, Satoshi Shimizu, Hiroyuki Ogawa, Yohei Masamori +2 more | 2018-05-29 |
| 9972640 | Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof | Murshed Chowdhury, Jin Liu, Johann Alsmeier | 2018-05-15 |
| 9959932 | Grouping memory cells into sub-blocks for program speed uniformity | Zhengyi Zhang, Yingda Dong, Johann Alsmeier | 2018-05-01 |
| 9953992 | Mid-plane word line switch connection for CMOS under three-dimensional memory device and method of making thereof | Hiroyuki Ogawa | 2018-04-24 |
| 9935123 | Within array replacement openings for a three-dimensional memory device | Masatoshi Nishikawa, Masafumi Miyamoto | 2018-04-03 |
| 9922987 | Three-dimensional memory device containing separately formed drain select transistors and method of making thereof | Yuki Mizutani, Fumiaki Toyama, Shigehiro Fujino, Johann Alsmeier | 2018-03-20 |
| 9917100 | Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the same | Tong Zhang, Johann Alsmeier, Jin Liu, Yanli Zhang | 2018-03-13 |