| 10157676 |
Dynamic tuning of first read countermeasures |
Liang Pang, Jiahui Yuan, Charles See Yeung Kwong |
2018-12-18 |
| 10153051 |
Program-verify of select gate transistor with doped channel in NAND string |
Hong-Yan Chen, Yen-Lung Li |
2018-12-11 |
| 10134479 |
Non-volatile memory with reduced program speed variation |
Zhengyi Zhang |
2018-11-20 |
| 10128257 |
Select transistors with tight threshold voltage in 3D memory |
Liang Pang, Jayavel Pachamuthu |
2018-11-13 |
| 10121552 |
Reducing charge loss in data memory cell adjacent to dummy memory cell |
Ashish Baraskar, Liang Pang, Ching-Huang Lu, Nan Lu, Hong-Yan Chen |
2018-11-06 |
| 10115464 |
Electric field to reduce select gate threshold voltage shift |
Ching-Huang Lu |
2018-10-30 |
| 10068657 |
Detecting misalignment in memory array and adjusting read and verify timing parameters on sub-block and block levels |
Xuehong Yu, Liang Pang |
2018-09-04 |
| 10068651 |
Channel pre-charge to suppress disturb of select gate transistors during erase in memory |
Vinh Diep, Wei Zhao, Ashish Baraskar, Ching-Huang Lu |
2018-09-04 |
| 10038005 |
Sense circuit having bit line clamp transistors with different threshold voltages for selectively boosting current in NAND strings |
Zhengyi Zhang, Henry Chin |
2018-07-31 |
| 10026487 |
Non-volatile memory with customized control of injection type of disturb during program verify for improved program performance |
Hong-Yan Chen |
2018-07-17 |
| 10020314 |
Forming memory cell film in stack opening |
Ashish Baraskar, Liang Pang, Yanli Zhang, Ching-Huang Lu |
2018-07-10 |
| 10008277 |
Block health monitoring using threshold voltage of dummy memory cells |
Liang Pang, Xuehong Yu, Nian Niles Yang |
2018-06-26 |
| 10008271 |
Programming of dummy memory cell to reduce charge loss in select gate transistor |
Vinh Diep, Ching-Huang Lu |
2018-06-26 |
| 9984760 |
Suppressing disturb of select gate transistors during erase in memory |
Zhengyi Zhang, Liang Pang |
2018-05-29 |
| 9959932 |
Grouping memory cells into sub-blocks for program speed uniformity |
Zhengyi Zhang, James Kai, Johann Alsmeier |
2018-05-01 |
| 9947407 |
Techniques for programming of select gates in NAND memory |
Hao Thai Nguyen, Man Lung Mui, Khanh Nguyen, Seungpil Lee, Toru Ishigaki |
2018-04-17 |
| 9941293 |
Select transistors with tight threshold voltage in 3D memory |
Liang Pang, Jayavel Pachamuthu |
2018-04-10 |
| 9922705 |
Reducing select gate injection disturb at the beginning of an erase operation |
Vinh Diep, Xuehong Yu, Zhengyi Zhang |
2018-03-20 |
| 9922992 |
Doping channels of edge cells to provide uniform programming speed and reduce read disturb |
Xuehong Yu |
2018-03-20 |
| 9922714 |
Temperature dependent erase in non-volatile storage |
Xuehong Yu |
2018-03-20 |
| 9911500 |
Dummy voltage to reduce first read effect in memory |
Liang Pang, Pao-Ling Koh, Jiahui Yuan, Charles See Yeung Kwong |
2018-03-06 |
| 9905305 |
Reducing hot electron injection type of read disturb in 3D non-volatile memory for edge word lines |
Hong-Yan Chen |
2018-02-27 |
| 9887002 |
Dummy word line bias ramp rate during programming |
Zhengyi Zhang |
2018-02-06 |
| 9859298 |
Amorphous silicon layer in memory device which reduces neighboring word line interference |
Liang Pang, Jayavel Pachamuthu |
2018-01-02 |