Issued Patents 2018
Showing 1–6 of 6 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10153211 | Methods, apparatus, and system for fabricating finFET devices with increased breakdown voltage | Yanzhen Wang, Sipeng Gu | 2018-12-11 |
| 10090382 | Integrated circuit structure including single diffusion break and end isolation region, and methods of forming same | Hong Yu, Hui Zhan, Zhenyu Hu | 2018-10-02 |
| 10083873 | Semiconductor structure with uniform gate heights | Xing Zhang, Hong Yu, Zhenyu Hu | 2018-09-25 |
| 10074732 | Methods of forming short channel and long channel finFET devices so as to adjust threshold voltages | Hui Zang, Hong Yu, Yanzhen Wang | 2018-09-11 |
| 10043713 | Method to reduce FinFET short channel gate height | Hong Yu, Zhenyu Hu, Xing Zhang | 2018-08-07 |
| 10014296 | Fin-type field effect transistors with single-diffusion breaks and method | Hong Yu, Sipeng Gu, Yanzhen Wang | 2018-07-03 |