| 10153157 |
P-FET with graded silicon-germanium channel |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2018-12-11 |
| 10056474 |
Semiconductor structures having increased channel strain using fin release in gate regions |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim |
2018-08-21 |
| 9997540 |
Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained silicon fins for nFET devices |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim |
2018-06-12 |
| 9966387 |
Strain release in pFET regions |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim |
2018-05-08 |
| 9954083 |
Semiconductor structures having increased channel strain using fin release in gate regions |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim |
2018-04-24 |
| 9917188 |
Dielectric isolated fin with improved fin profile |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Kern Rim |
2018-03-13 |
