Issued Patents 2018
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10164025 | Semiconductor device having termination trench | Oliver Blank, Ralf Siemieniec, Li Juin Yip | 2018-12-25 |
| 10157982 | Charge compensation semiconductor devices | Daniel Tutuc, Christian Fachmann, Maximilian Treiber | 2018-12-18 |
| 10134845 | Method and power semiconductor device having an insulating region arranged in an edge termination region | Hans-Joachim Schulze, Anton Mauder | 2018-11-20 |
| 10109489 | Method for producing a superjunction device | Anton Mauder, Hans Weber, Johannes Georg Laven, Hans-Joachim Schulze, Werner Schustereder +3 more | 2018-10-23 |
| 10096704 | Semiconductor device having a non-depletable doping region | — | 2018-10-09 |
| 10084038 | Semiconductor device with drift zone and backside emitter and method of manufacturing thereof | Enrique Vecino Vazquez, Daniel Pobig, Manfred Pippan, Patrick Schindler | 2018-09-25 |
| 9972619 | Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices | Rolf Weis, Martin Feldtkeller, Gerald Deboy, Matthias Stecher, Armin Willmeroth | 2018-05-15 |
| 9960156 | Integrated semiconductor device having a level shifter | Andreas Meiser, Steffen Thiele | 2018-05-01 |
| 9954056 | Semiconductor device with superjunction structure and transistor cells in a transition region along a transistor cell region | Stefan Gamerith | 2018-04-24 |
| 9947741 | Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active area | Hans-Joachim Schulze, Franz-Josef Niedernostheide, Anton Mauder, Joachim Weyers, Markus Schmitt +3 more | 2018-04-17 |
| 9947648 | Semiconductor device including a diode at least partly arranged in a trench | Joachim Weyers, Anton Mauder, Andreas Meiser, Ulrich Glaser | 2018-04-17 |
| 9941276 | Method of producing a semiconductor component arrangement comprising a trench transistor | Markus Zundel, Norbert Krischke | 2018-04-10 |
| 9941365 | Method for forming a stress-reduced field-effect semiconductor device | Stefan Sedlmaier, Markus Zundel, Johannes Baumgartl, Anton Mauder, Ralf Siemieniec +2 more | 2018-04-10 |
| 9941349 | Superjunction semiconductor device with oppositely doped semiconductor regions formed in trenches | Andreas Meiser | 2018-04-10 |
| 9929181 | Method for manufacturing an electronic device and method for operating an electronic device | Thoralf Kautzsch, Alessia Scire, Steffen Bieselt, Anton Mauder, Wolfgang Scholz +2 more | 2018-03-27 |
| 9923066 | Wide bandgap semiconductor device | Daniel Kueck, Thomas Aichinger, Anton Mauder | 2018-03-20 |
| 9917159 | Semiconductor device comprising planar gate and trench field electrode structure | Michael Hutzler, Ralf Siemieniec | 2018-03-13 |
| 9899510 | Semiconductor device | Winfried Kaindl, Armin Willmeroth | 2018-02-20 |
| 9893178 | Semiconductor device having a channel separation trench | Andreas Meiser, Till Schloesser | 2018-02-13 |
| 9893175 | Integrated circuit with a power transistor and a driver circuit integrated in a common semiconductor body | Anton Mauder, Daniel Domes | 2018-02-13 |