Issued Patents 2018
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10164043 | Semiconductor diode and method for forming a semiconductor diode | Hans-Joachim Schulze, Philipp Seng | 2018-12-25 |
| 10158356 | Switch device | Martina Seider-Schmidt, Hans-Joachim Schulze, Oliver Hellmund, Sebastian Schmidt, Peter Irsigler | 2018-12-18 |
| 10153766 | Switch device | Martin Gruber, Goran Keser | 2018-12-11 |
| 10153764 | Current measurement in a power semiconductor device | Markus Bina, Jens Barrenscheen | 2018-12-11 |
| 10153276 | Group III heterojunction semiconductor device having silicon carbide-containing lateral diode | Khalil Hosseini, Frank Kahlmann | 2018-12-11 |
| 10141404 | Power semiconductor device having fully depleted channel region | Christian Philipp Sandow, Franz-Josef Niedernostheide | 2018-11-27 |
| 10134835 | Power semiconductor device having fully depleted channel regions | Franz-Josef Niedernostheide, Frank Pfirsch, Christian Philipp Sandow | 2018-11-20 |
| 10134845 | Method and power semiconductor device having an insulating region arranged in an edge termination region | Hans-Joachim Schulze, Franz Hirler | 2018-11-20 |
| 10115791 | Semiconductor device including a super junction structure in a SiC semiconductor body | Rudolf Elpelt, Dethard Peters | 2018-10-30 |
| 10109489 | Method for producing a superjunction device | Hans Weber, Franz Hirler, Johannes Georg Laven, Hans-Joachim Schulze, Werner Schustereder +3 more | 2018-10-23 |
| 10103227 | Method for manufacturing a power semiconductor device | Holger Huesken, Hans-Joachim Schulze, Wolfgang Roesner | 2018-10-16 |
| 10083960 | Power semiconductor device having fully depleted channel regions | Franz-Josef Niedernostheide, Christian Philipp Sandow | 2018-09-25 |
| 10083835 | Forming electrode trenches by using a directed ion beam and semiconductor device with trench electrode structures | Johannes Georg Laven, Roland Rupp, Hans-Joachim Schulze, Werner Schustereder | 2018-09-25 |
| 10069016 | Semiconductor diode with trench structures and including doped layers and doped zones of opposite conductivity types providing high surge energy capacity | Franz-Josef Niedernostheide, Hans-Joachim Schulze, Holger Schulze | 2018-09-04 |
| 10042002 | System and method for contact measurement circuit | Jens Barrenscheen | 2018-08-07 |
| 9997517 | Power semiconductor device having fully depleted channel regions | Franz-Josef Niedernostheide, Christian Philipp Sandow | 2018-06-12 |
| 9997359 | Semiconductor device with rear-side insert structure | Johannes Georg Laven, Hans-Joachim Schulze, Erich Griebl | 2018-06-12 |
| 9954065 | Method of forming a semiconductor device and semiconductor device | Frank Pfirsch, Hans-Joachim Schulze, Ingo Muri, Iris Moder, Johannes Baumgartl | 2018-04-24 |
| 9947741 | Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active area | Hans-Joachim Schulze, Franz-Josef Niedernostheide, Joachim Weyers, Franz Hirler, Markus Schmitt +3 more | 2018-04-17 |
| 9947648 | Semiconductor device including a diode at least partly arranged in a trench | Joachim Weyers, Franz Hirler, Andreas Meiser, Ulrich Glaser | 2018-04-17 |
| 9941365 | Method for forming a stress-reduced field-effect semiconductor device | Stefan Sedlmaier, Markus Zundel, Franz Hirler, Johannes Baumgartl, Ralf Siemieniec +2 more | 2018-04-10 |
| 9929181 | Method for manufacturing an electronic device and method for operating an electronic device | Thoralf Kautzsch, Alessia Scire, Steffen Bieselt, Franz Hirler, Wolfgang Scholz +2 more | 2018-03-27 |
| 9923066 | Wide bandgap semiconductor device | Daniel Kueck, Thomas Aichinger, Franz Hirler | 2018-03-20 |
| 9893175 | Integrated circuit with a power transistor and a driver circuit integrated in a common semiconductor body | Daniel Domes, Franz Hirler | 2018-02-13 |
| 9882555 | Switch device | Andreas Meiser, Jens Barrenscheen | 2018-01-30 |