Issued Patents 2018
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10141404 | Power semiconductor device having fully depleted channel region | Anton Mauder, Christian Philipp Sandow | 2018-11-27 |
| 10134885 | Semiconductor device having an active trench and a body trench | Maria Cotorogea, Frank Wolter, Hans-Joachim Schulze, Yvonne Gawlina-Schmidl | 2018-11-20 |
| 10134835 | Power semiconductor device having fully depleted channel regions | Anton Mauder, Frank Pfirsch, Christian Philipp Sandow | 2018-11-20 |
| 10109624 | Semiconductor device comprising transistor cell units with different threshold voltages | Markus Bina, Alexander Philippou | 2018-10-23 |
| 10083960 | Power semiconductor device having fully depleted channel regions | Anton Mauder, Christian Philipp Sandow | 2018-09-25 |
| 10069016 | Semiconductor diode with trench structures and including doped layers and doped zones of opposite conductivity types providing high surge energy capacity | Anton Mauder, Hans-Joachim Schulze, Holger Schulze | 2018-09-04 |
| 9997517 | Power semiconductor device having fully depleted channel regions | Anton Mauder, Christian Philipp Sandow | 2018-06-12 |
| 9978837 | Insulated gate bipolar transistor device having a fin structure | Christian Philipp Sandow, Vera van Treek | 2018-05-22 |
| 9947741 | Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active area | Hans-Joachim Schulze, Anton Mauder, Joachim Weyers, Franz Hirler, Markus Schmitt +3 more | 2018-04-17 |
| 9917181 | Bipolar transistor with superjunction structure | Frank Pfirsch, Hans-Joachim Schulze, Stephan Voss | 2018-03-13 |
| 9899377 | Insulated gate semiconductor device with soft switching behavior | Hans-Joachim Schulze, Frank Pfirsch, Francisco Javier Santos Rodriguez, Stephan Voss, Wolfgang Wagner | 2018-02-20 |
| 9882038 | Method of manufacturing a bipolar semiconductor switch | Hans-Joachim Schulze | 2018-01-30 |
| 9876004 | Semiconductor component including a short-circuit structure | Hans-Joachim Schulze, Uwe Kellner-Werdehausen, Reiner Barthelmess | 2018-01-23 |
| 9859272 | Semiconductor device with a reduced band gap zone | Hans-Joachim Schulze, Holger Huesken, Frank Pfirsch, Roman Roth, Christian Philipp Sandow +2 more | 2018-01-02 |
| 9859408 | Power semiconductor transistor having fully depleted channel region | Anton Mauder, Christian Philipp Sandow | 2018-01-02 |