| 10032870 |
Low defect III-V semiconductor template on porous silicon |
Joel P. de Souza, Keith E. Fogel, Alexander Reznicek |
2018-07-24 |
| 10014322 |
Local SOI fins with multiple heights |
Kangguo Cheng, Joel P. de Souza, Ali Khakifirooz, Alexander Reznicek |
2018-07-03 |
| 10002798 |
Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step |
Pranita Kerber, Qiqing C. Ouyang, Alexander Reznicek |
2018-06-19 |
| 10002948 |
FinFET having highly doped source and drain regions |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2018-06-19 |
| 9972620 |
Preventing shorting between source and/or drain contacts and gate |
Charan V. Surisetty, Kangguo Cheng, Alexander Reznicek |
2018-05-15 |
| 9966457 |
Transistor structure with varied gate cross-sectional area |
Alexander Reznicek, Pranita Kerber, Qiqing C. Ouyang |
2018-05-08 |
| 9935181 |
FinFET having highly doped source and drain regions |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2018-04-03 |
| 9899274 |
Low-cost SOI FinFET technology |
Stephen W. Bedell, Joel P. de Souza, Alexander Reznicek, Devendra K. Sadana |
2018-02-20 |
| 9875939 |
Methods of forming uniform and pitch independent fin recess |
Yue Ke, Alexander Reznicek, Benjamin G. Moser, Melissa A. Smith, Henry K. Utomo +2 more |
2018-01-23 |
