Issued Patents 2017
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9853155 | MOS devices having epitaxy regions with reduced facets | Hsueh-Chang Sung, Kun-Mu Li, Tze-Liang Lee, Tsz-Mei Kwok | 2017-12-26 |
| 9842930 | Semiconductor device and fabrication method thereof | Lilly Su, Pang-Yen Tsai, Tze-Liang Lee, Yen-Ru Lee, Ming-Hua Yu | 2017-12-12 |
| 9831343 | Semiconductor device having NFET structure and method of fabricating the same | Chien-I Kuo, Lilly Su, Chien-Chang Su, Yi-Kai TSENG, Ying-Wei Li | 2017-11-28 |
| 9831116 | FETS and methods of forming FETs | Yen-Ru Lee, Chien-I Kuo, Li-Li Su, Chien-Chang Su, Heng-Wen Ting +3 more | 2017-11-28 |
| 9806171 | Method for making source and drain regions of a MOSFET with embedded germanium-containing layers having different germanium concentration | Tsz-Mei Kwok, Kun-Mu Li, Hsueh-Chang Sung, Tze-Liang Lee | 2017-10-31 |
| 9755077 | Source and drain stressors with recessed top surfaces | Kun-Mu Li, Tsz-Mei Kwok, Hsueh-Chang Sung, Tze-Liang Lee | 2017-09-05 |
| 9728641 | Semiconductor device and fabrication method thereof | Yen-Ru Lee, Ming-Hua Yu, Tze-Liang Lee, Pang-Yen Tsai, Lilly Su +2 more | 2017-08-08 |
| 9698243 | Transistor strain-inducing scheme | Tsz-Mei Kwok, Hsueh-Chang Sung, Kun-Mu Li, Tze-Liang Lee | 2017-07-04 |
| 9691898 | Germanium profile for channel strain | Hsueh-Chang Sung, Tsz-Mei Kwok, Kun-Mu Li, Tze-Liang Lee | 2017-06-27 |
| 9666686 | MOS devices having epitaxy regions with reduced facets | Hsueh-Chang Sung, Kun-Mu Li, Tze-Liang Lee, Tsz-Mei Kwok | 2017-05-30 |
| 9653574 | Selective etching in the formation of epitaxy regions in MOS devices | Yu-Hung Cheng, Tze-Liang Lee | 2017-05-16 |
| 9601619 | MOS devices with non-uniform P-type impurity profile | Hsueh-Chang Sung, Tsz-Mei Kwok, Kun-Mu Li, Tze-Liang Lee | 2017-03-21 |
| 9601574 | V-shaped epitaxially formed semiconductor layer | Tsz-Mei Kwok, Ming-Hua Yu | 2017-03-21 |
| 9583483 | Source and drain stressors with recessed top surfaces | Kun-Mu Li, Tsz-Mei Kwok, Hsueh-Chang Sung, Tze-Liang Lee | 2017-02-28 |