Issued Patents 2017
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9853028 | Vertical FET with reduced parasitic capacitance | Kangguo Cheng, Xin Miao, Philip J. Oldiges, Chen Zhang | 2017-12-26 |
| 9837409 | Integration of vertical transistors with 3D long channel transistors | Kangguo Cheng, Xin Miao, Chen Zhang | 2017-12-05 |
| 9799655 | Flipped vertical field-effect-transistor | Kangguo Cheng, Xin Miao, Chen Zhang | 2017-10-24 |
| 9793349 | Vertical single electron transistor formed by condensation | Kangguo Cheng, Xin Miao, Chen Zhang | 2017-10-17 |
| 9768085 | Top contact resistance measurement in vertical FETs | Kangguo Cheng, Zuoguang Liu, Xin Miao, Chen Zhang | 2017-09-19 |
| 9761694 | Vertical FET with selective atomic layer deposition gate | Kangguo Cheng, Xin Miao, Chen Zhang | 2017-09-12 |
| 9761728 | Self-aligned source/drain junction for vertical field-effect transistor (FET) and method of forming the same | Kangguo Cheng, Xin Miao, Chen Zhang | 2017-09-12 |
| 9741717 | FinFETs with controllable and adjustable channel doping | Kangguo Cheng, Xin Miao, Chen Zhang | 2017-08-22 |
| 9722125 | Radiation sensor, method of forming the sensor and device including the sensor | Kangguo Cheng, Xin Miao, Chen Zhang | 2017-08-01 |
| 9721845 | Vertical field effect transistors with bottom contact metal directly beneath fins | Kangguo Cheng, Xin Miao, Chen Zhang | 2017-08-01 |
| 9698266 | Semiconductor device strain relaxation buffer layer | Kangguo Cheng, Xin Miao, Chen Zhang | 2017-07-04 |
| 9698251 | Fin reveal last for finfet | Kangguo Cheng, Xin Miao, Chen Zhang | 2017-07-04 |
| 9653458 | Integrated device with P-I-N diodes and vertical field effect transistors | Kangguo Cheng, Xin Miao, Chen Zhang | 2017-05-16 |
| 9653602 | Tensile and compressive fins for vertical field effect transistors | Kangguo Cheng, Xin Miao, Chen Zhang | 2017-05-16 |
| 9607899 | Integration of vertical transistors with 3D long channel transistors | Kangguo Cheng, Xin Miao, Chen Zhang | 2017-03-28 |
| 9595605 | Vertical single electron transistor formed by condensation | Kangguo Cheng, Xin Miao, Chen Zhang | 2017-03-14 |