| 9852783 |
Metal-oxide semiconductor (MOS) transistor offset-cancelling (OC), zero-sensing (ZS) dead zone, current-latched sense amplifiers (SAs) (CLSAs) (OCZS-SAs) for sensing differential voltages |
Byung Kyu Song, Seong-Ook Jung, Jung Pill Kim, Seung H. Kang |
2017-12-26 |
| 9800271 |
Error correction and decoding |
Seong-Ook Jung, Sara Choi, Byung Kyu Song, Jisu Kim, Jung Pill Kim +3 more |
2017-10-24 |
| 9728259 |
Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense margin |
Seong-Ook Jung, Byung Kyu Song, Jung Pill Kim, Seung H. Kang |
2017-08-08 |
| 9691462 |
Latch offset cancelation for magnetoresistive random access memory |
Seong-Ook Jung, Byungkyu Song, Jung Pill Kim, Seung H. Kang |
2017-06-27 |
| 9666259 |
Dual mode sensing scheme |
Seong-Ook Jung, Byung Kyu Song, Jung Pill Kim, Seung H. Kang |
2017-05-30 |