HG

Huadong Gan

AT Avalanche Technology: 11 patents #3 of 24Top 15%
Overall (2017): #6,054 of 506,227Top 2%
11
Patents 2017

Issued Patents 2017

Patent #TitleCo-InventorsDate
9831421 Magnetic memory element with composite fixed layer Zihui Wang, Yiming Huai, Yuchen Zhou, Xiaobin Wang, Bing K. Yen +1 more 2017-11-28
9793319 Multilayered seed structure for perpendicular MTJ memory element Yiming Huai, Bing K. Yen, Roger Klas Malmhall, Yuchen Zhou 2017-10-17
9780300 Magnetic memory element with composite perpendicular enhancement layer Yuchen Zhou, Bing K. Yen, Yiming Huai 2017-10-03
9748471 Perpendicular magnetic memory element having magnesium oxide cap layer Yuchen Zhou, Zihui Wang, Yiming Huai 2017-08-29
9647032 Spin-orbitronics device and applications thereof Xiaobin Wang, Parviz Keshtbod, Kimihiro Satoh, Zihui Wang 2017-05-09
9647202 Magnetic random access memory with perpendicular enhancement layer Yuchen Zhou, Yiming Huai, Zihui Wang, Xiaobin Wang 2017-05-09
9634244 Magnetic random access memory with perpendicular interfacial anisotropy Yiming Huai, Zihui Wang, Yuchen Zhou 2017-04-25
9608038 Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer Zihui Wang, Yuchen Zhou, Yiming Huai 2017-03-28
9559144 Magnetic random access memory element having tantalum perpendicular enhancement layer Yiming Huai, Yuchen Zhou, Zihui Wang, Xiaobin Wang, Bing K. Yen 2017-01-31
9548334 Magnetic tunnel junction with perpendicular enhancement layer and thin reference layer Yuchen Zhou, Yiming Huai, Zihui Wang, Xiaobin Wang 2017-01-17
9543506 Magnetic random access memory with tri-layer reference layer Yiming Huai, Yuchen Zhou, Zihui Wang, Xiaobin Wang, Bing K. Yen +1 more 2017-01-10