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Jonathan T. Shaw

IBM: 8 patents #615 of 10,852Top 6%
Overall (2017): #11,565 of 506,227Top 3%
8
Patents 2017

Issued Patents 2017

Patent #TitleCo-InventorsDate
9837319 Asymmetric high-K dielectric for reducing gate induced drain leakage Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Claude Ortolland 2017-12-05
9768071 Asymmetric high-K dielectric for reducing gate induced drain leakage Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Claude Ortolland 2017-09-19
9721843 Asymmetric high-k dielectric for reducing gate induced drain leakage Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Claude Ortolland 2017-08-01
9685379 Asymmetric high-k dielectric for reducing gate induced drain leakage Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Claude Ortolland 2017-06-20
9577061 Asymmetric high-K dielectric for reducing gate induced drain leakage Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Claude Ortolland 2017-02-21
9570354 Asymmetric high-K dielectric for reducing gate induced drain leakage Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Claude Ortolland 2017-02-14
9559010 Asymmetric high-k dielectric for reducing gate induced drain leakage Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Claude Ortolland 2017-01-31
9543213 Asymmetric high-k dielectric for reducing gate induced drain leakage Anthony I. Chou, Arvind Kumar, Chung-Hsun Lin, Shreesh Narasimha, Claude Ortolland 2017-01-10