Issued Patents 2017
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9847333 | Reducing risk of punch-through in FinFET semiconductor structure | Kwanyong LIM | 2017-12-19 |
| 9842897 | Bulk finFET with partial dielectric isolation featuring a punch-through stopping layer under the oxide | Ajey Poovannummoottil Jacob | 2017-12-12 |
| 9716174 | Electrical isolation of FinFET active region by selective oxidation of sacrificial layer | Jody A. Fronheiser, Ajey Poovannummoottil Jacob | 2017-07-25 |
| 9679972 | Thin strain relaxed buffers with multilayer film stacks | Jody A. Fronheiser, Stephen W. Bedell, Joël KANYANDEKWE | 2017-06-13 |
| 9601383 | FinFET fabrication by forming isolation trenches prior to fin formation | — | 2017-03-21 |
| 9590040 | Methods of forming fins for a FinFET device by forming and replacing sacrificial fin structures with alternative materials | Ajey Poovannummoottil Jacob | 2017-03-07 |
| 9589849 | Methods of modulating strain in PFET and NFET FinFET semiconductor devices | Ajey Poovannummoottil Jacob, Bruce B. Doris, Ali Khakifirooz | 2017-03-07 |
| 9576857 | Method and structure for SRB elastic relaxation | Ruilong Xie, Andreas Knorr | 2017-02-21 |
| 9570588 | Methods of forming transistor structures including forming channel material after formation processes to prevent damage to the channel material | Steven Bentley | 2017-02-14 |
| 9564486 | Self-aligned dual-height isolation for bulk FinFET | Steven Bentley, Kangguo Cheng, Bruce B. Doris, Jody A. Fronheiser, Ajey Poovannummoottil Jacob +2 more | 2017-02-07 |
| 9536990 | Methods of forming replacement fins for a FinFET device using a targeted thickness for the patterned fin etch mask | Jody A. Fronheiser, Bruce B. Doris | 2017-01-03 |