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Semiconductor device with front and rear surface electrodes on a substrate having element and circumferential regions, an insulating gate type switching element in the element region being configured to switch between the front and rear surface electrodes |
Hirokazu Fujiwara, Tomoharu Ikeda, Yukihiko Watanabe, Toshimasa Yamamoto |
2017-12-26 |
| 9853139 |
Semiconductor device and method for manufacturing the semiconductor device |
Hidefumi Takaya, Akitaka Soeno, Toshimasa Yamamoto, Narumasa Soejima |
2017-12-26 |
| 9780205 |
Insulated gate type semiconductor device having floating regions at bottom of trenches in cell region and circumferential region and manufacturing method thereof |
Hirokazu Fujiwara, Tomoharu Ikeda, Yukihiko Watanabe, Toshimasa Yamamoto |
2017-10-03 |
| 9755042 |
Insulated gate semiconductor device and method for manufacturing the insulated gate semiconductor device |
Tomoharu Ikeda, Tomoyuki Shoji, Toshimasa Yamamoto |
2017-09-05 |
| 9640651 |
Semiconductor device and method of manufacturing semiconductor device |
Hidefumi Takaya, Akitaka Soeno, Kimimori Hamada, Shoji Mizuno, Sachiko Aoi +1 more |
2017-05-02 |
| 9638279 |
Damper and handle device having the same |
Hiroaki Ichioka |
2017-05-02 |
| 9627248 |
Insulated gate type semiconductor device |
Kimimori Hamada, Akitaka Soeno, Hidefumi Takaya, Sachiko Aoi, Toshimasa Yamamoto |
2017-04-18 |
| 9601592 |
IGBT and method of manufacturing the same |
Masaru Senoo, Kyosuke Miyagi, Tsuyoshi Nishiwaki |
2017-03-21 |