Issued Patents 2017
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9853141 | Semiconductor device with front and rear surface electrodes on a substrate having element and circumferential regions, an insulating gate type switching element in the element region being configured to switch between the front and rear surface electrodes | Jun Saito, Hirokazu Fujiwara, Tomoharu Ikeda, Toshimasa Yamamoto | 2017-12-26 |
| 9825123 | Schottky barrier diode and method for manufacturing the same | Tatsuji Nagaoka, Hiroki Miyake, Sachiko Aoi, Atsuya Akiba | 2017-11-21 |
| 9818860 | Silicon carbide semiconductor device and method for producing the same | Yuichi Takeuchi, Naohiro Suzuki, Masahiro Sugimoto, Hidefumi Takaya, Akitaka Soeno +2 more | 2017-11-14 |
| 9793376 | Silicon carbide semiconductor device and method of manufacturing the same | Shinichiro Miyahara, Toshimasa Yamamoto, Jun Morimoto, Narumasa Soejima | 2017-10-17 |
| 9780205 | Insulated gate type semiconductor device having floating regions at bottom of trenches in cell region and circumferential region and manufacturing method thereof | Jun Saito, Hirokazu Fujiwara, Tomoharu Ikeda, Toshimasa Yamamoto | 2017-10-03 |
| 9673288 | Silicon carbide semiconductor device including conductivity layer in trench | Yuichi Takeuchi, Kazumi Chida, Narumasa Soejima | 2017-06-06 |
| 9660046 | Method of manufacturing semiconductor device | Sachiko Aoi, Katsumi Suzuki, Shoji Mizuno | 2017-05-23 |
| 9647108 | Silicon carbide semiconductor device | Naohiro Suzuki, Sachiko Aoi, Akitaka Soeno, Masaki Konishi | 2017-05-09 |
| 9640651 | Semiconductor device and method of manufacturing semiconductor device | Hidefumi Takaya, Jun Saito, Akitaka Soeno, Kimimori Hamada, Shoji Mizuno +1 more | 2017-05-02 |
| 9543428 | Silicon carbide semiconductor device and method for producing the same | Yuichi Takeuchi, Naohiro Suzuki, Masahiro Sugimoto, Hidefumi Takaya, Akitaka Soeno +2 more | 2017-01-10 |