Issued Patents 2016
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9502409 | Multi-gate semiconductor devices | Jon-Hsu Ho, Chih-Ching Wang, Ching-Fang Huang, Wen-Hsing Hsieh, Tsung-Hsing Yu +3 more | 2016-11-22 |
| 9502253 | Method of manufacturing an integrated circuit | Yi-Ming Sheu, Tsung-Hsing Yu, Kuan-Lun Cheng, Chih-Pin Tsao, Wen-Yuan Chen +2 more | 2016-11-22 |
| 9490348 | Method of forming a FinFET having an oxide region in the source/drain region | Kuo-Cheng Ching, Chih-Hao Wang, Ching-Wei Tsai, Jean-Pierre Colinge | 2016-11-08 |
| 9455346 | Channel strain inducing architecture and doping technique at replacement poly gate (RPG) stage | Yi-Ming Sheu, Tzer-Min Shen, Chun-Fu Cheng, Hong-Shen Chen | 2016-09-27 |
| 9437683 | Method and structure for FinFET device | Kuo-Cheng Ching, Ka-Hing Fung, Chih-Sheng Chang | 2016-09-06 |
| 9436362 | OData service provisioning on top of GenIL layer | Christian Weiss, Joerg Singler | 2016-09-06 |
| 9419098 | Tuning strain in semiconductor devices | Jean-Pierre Colinge, Kuo-Cheng Ching, Gwan Sin Chang, Chih-Hao Wang, Carlos H. Diaz | 2016-08-16 |
| 9412828 | Aligned gate-all-around structure | Kuo-Cheng Ching, Jean-Pierre Colinge | 2016-08-09 |
| 9349850 | Thermally tuning strain in semiconductor devices | Jean-Pierre Colinge, Kuo-Cheng Ching, Gwan Sin Chang, Chih-Hao Wang, Carlos H. Diaz | 2016-05-24 |
| 9343551 | Methods for manufacturing a fin structure of semiconductor device | Kuo-Cheng Ching, Chih-Hao Wang, Carlos H. Diaz, Jean-Pierre Colinge | 2016-05-17 |
| 9318322 | FinFET design controlling channel thickness | Ken-Ichi Goto, Wen-Hsing Hsieh, Jon-Hsu Ho, Chih-Ching Wang, Ching-Fang Huang | 2016-04-19 |
| 9317558 | Intelligent unmasking in an in-memory database | — | 2016-04-19 |
| 9318606 | FinFET device and method of fabricating same | Chih-Hao Wang, Kuo-Cheng Ching, Gwan Sin Chang | 2016-04-19 |
| 9306067 | Nonplanar device and strain-generating channel dielectric | Kuo-Cheng Ching, Ka-Hing Fung | 2016-04-05 |
| 9299810 | Fin-type field effect transistor and method of fabricating the same | Kuo-Cheng Ching, Chih-Hao Wang, Carlos H. Diaz, Jean-Pierre Colinge | 2016-03-29 |
| 9299784 | Semiconductor device with non-linear surface | Xiaomeng Chen, Shih-Chang Liu, Chien-Hong Chen | 2016-03-29 |
| 9299768 | Semiconductor device with non-linear surface | Xiaomeng Chen, Shih-Chang Liu, Chien-Hong Chen | 2016-03-29 |
| 9263535 | Method for fabricating a gate all around device | Jean-Pierre Colinge, Kuo-Cheng Ching | 2016-02-16 |
| 9257428 | Structure and method for FinFET device | Kuo-Cheng Ching, Ka-Hing Fung | 2016-02-09 |
| 9257559 | Semiconductor device and formation thereof | Kuo-Cheng Ching, Chih-Hao Wang, Carlos H. Diaz | 2016-02-09 |
| 9245882 | FinFETs with gradient germanium-containing channels | Kuo-Cheng Ching, Jiun-Jia Huang, Chao-Hsiung Wang, Chi-Wen Liu | 2016-01-26 |
| 9236445 | Transistor having replacement gate and epitaxially grown replacement channel region | Chia-Wen Liu, Tsung-Hsing Yu, Wei-Hao Wu, Meikei Ieong, Ken-Ichi Goto | 2016-01-12 |
| 9230828 | Source and drain dislocation fabrication in FinFETs | Wen-Hsing Hsieh, Hua Feng Chen, Ting-Yun Wu, Carlos H. Diaz, Tzer-Min Shen +1 more | 2016-01-05 |