Issued Patents 2016
Showing 1–25 of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9525026 | Method of forming an epitaxial semiconductor layer in a recess and a semiconductor device having the same | Tsz-Mei Kwok | 2016-12-20 |
| 9515072 | FinFET structure and method for manufacturing thereof | Chun-Lung Ni, Kei-Wei Chen | 2016-12-06 |
| 9508556 | Method for fabricating fin field effect transistor and semiconductor device | Chien-Tai Chan, Ziwei Fang, Kei-Wei Chen | 2016-11-29 |
| 9502298 | Asymmetric cyclic deposition and etch process for epitaxial formation mechanisms of source and drain regions | Tsan-Yao Chen, Jian-An Ke | 2016-11-22 |
| 9502404 | Epitaxial formation mechanisms of source and drain regions | Meng-Yueh Liu | 2016-11-22 |
| 9496149 | Semiconductor devices and methods for manufacturing the same | Tsz-Mei Kwok | 2016-11-15 |
| 9496385 | Structure and method of forming semiconductor device | Tsan-Chun Wang | 2016-11-15 |
| 9482518 | Systems and methods for semiconductor device process determination using reflectivity measurement | Sheng-Wen Yu, De-Wei Yu | 2016-11-01 |
| 9455200 | Method for semiconductor device fabrication | Jian-An Ke | 2016-09-27 |
| 9450097 | Methods for doping Fin field-effect transistors and Fin field-effect transistor | Yu-Lien Huang, De-Wei Yu | 2016-09-20 |
| 9443869 | Systems and methods for a semiconductor structure having multiple semiconductor-device layers | Yi-Tang Lin, Clement Hsingjen Wann | 2016-09-13 |
| 9443847 | Epitaxial formation of source and drain regions | Yi-Fang Pai | 2016-09-13 |
| 9418871 | Systems and methods for annealing semiconductor structures | Zi-Wei Fang, Chao-Hsiung Wang | 2016-08-16 |
| 9412838 | Ion implantation methods and structures thereof | Tsan-Chun Wang, Ziwei Fang | 2016-08-09 |
| 9406546 | Mechanism for FinFET well doping | Yan-Ting Lin, Clement Hsingjen Wann | 2016-08-02 |
| 9401302 | FinFET fin bending reduction | Shiang-Rung Tsai | 2016-07-26 |
| 9401274 | Methods and systems for dopant activation using microwave radiation | Huai-Tei Yang, Kuo-Feng Yu, Kei-Wei Chen | 2016-07-26 |
| 9396986 | Mechanism of forming a trench structure | Sen-Hong Syue, Ziwei Fang | 2016-07-19 |
| 9379208 | Integrated circuits and methods of forming integrated circuits | Su-Hao Liu, Chien-Tai Chan, King-Yuen Wong, Chien-Chang Su | 2016-06-28 |
| 9362175 | Epitaxial growth of doped film for source and drain regions | Jian-An Ke, Tsan-Yao Chen, Chin-Kun Wang | 2016-06-07 |
| 9338834 | Systems and methods for microwave-radiation annealing | Zi-Wei Fang, Chao-Hsiung Wang | 2016-05-10 |
| 9337316 | Method for FinFET device | Kuo-Feng Yu | 2016-05-10 |
| 9299587 | Microwave anneal (MWA) for defect recovery | Clement Hsingjen Wann | 2016-03-29 |
| 9293534 | Formation of dislocations in source and drain regions of FinFET devices | Wei-Yuan Lu, Chien-Tai Chan, Wei-Yang Lee, Da-Wen Lin | 2016-03-22 |
| 9263578 | Semiconductor substructure having elevated strain material-sidewall interface and method of making the same | Wei-Yang Lee, Yuan-Ching Peng | 2016-02-16 |