Issued Patents 2016
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9520479 | Low-temperature epitaxial method for manufacturing backside field stop layer of insulated gate bipolar transistor (IGBT) | Kuan-Yu Chen | 2016-12-13 |
| 9514928 | Selective repairing process for barrier layer | Chih-Chien Chi, Chung-Chi Ko, Huang-Yi Huang, Szu-Ping Tung, Ching-Hua Hsieh | 2016-12-06 |
| 9455328 | Low-temperature oxide method for manufacturing backside field stop layer of insulated gate bipolar transistor | Kuan-Yu Chen | 2016-09-27 |
| 9406745 | Method of manufacturing super junction for semiconductor device | Paul Chang, Kuo-Liang Chao, Lung-Ching Kao | 2016-08-02 |
| 9379180 | Super junction for semiconductor device and method for manufacturing the same | Paul Chang, Kuo-Liang Chao, Lung-Ching Kao | 2016-06-28 |
| 9373728 | Trench MOS PN junction diode structure | — | 2016-06-21 |
| 9362350 | MOS P-N junction diode with enhanced response speed and manufacturing method thereof | Hung-Hsin Kuo | 2016-06-07 |
| 9349689 | Semiconductor devices including conductive features with capping layers and methods of forming the same | Hui-Chun Yang, Keng-Chu Lin, Joung-Wei Liou | 2016-05-24 |
| 9324606 | Self-aligned repairing process for barrier layer | Chih-Chien Chi, Chung-Chi Ko, Huang-Yi Huang, Szu-Ping Tung, Ching-Hua Hsieh | 2016-04-26 |
| 9240470 | High-performance reverse-conduction field-stop (RCFS) insulated gate bipolar transistor and method for manufacturing the same | Hung-Hsin Kuo, Yi-Lun Hsia, Chung-Chen CHANG | 2016-01-19 |