| 9525039 |
Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer |
Isik C. Kizilyalli, Dave P. Bour, Hui Nie, Quentin Diduck, Ozgur Aktas |
2016-12-20 |
| 9472684 |
Lateral GaN JFET with vertical drift region |
Hui Nie, Andrew P. Edwards, Isik C. Kizilyalli, Dave P. Bour |
2016-10-18 |
| 9450112 |
GaN-based Schottky barrier diode with algan surface layer |
Richard J. Brown, David P. Bour, Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards +2 more |
2016-09-20 |
| 9368582 |
High power gallium nitride electronics using miscut substrates |
Isik C. Kizilyalli, David P. Bour, Gangfeng Ye |
2016-06-14 |
| 9330918 |
Edge termination by ion implantation in gallium nitride |
Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour +1 more |
2016-05-03 |
| 9324844 |
Method and system for a GaN vertical JFET utilizing a regrown channel |
Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour +1 more |
2016-04-26 |
| 9318331 |
Method and system for diffusion and implantation in gallium nitride based devices |
David P. Bour, Richard J. Brown, Isik C. Kizilyalli, Linda Romano, Andrew P. Edwards +2 more |
2016-04-19 |
| 9287389 |
Method and system for doping control in gallium nitride based devices |
Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour +1 more |
2016-03-15 |